Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Karthik V. Raman"'
Autor:
Prince Sharma, Archit Bhardwaj, Rahul Sharma, V. P. S. Awana, Tharangattu N. Narayanan, Karthik V. Raman, Mahesh Kumar
Publikováno v:
The Journal of Physical Chemistry C. 126:11138-11147
Publikováno v:
Physical Review B. 107
Elastic deformations (strain) couple to the electronic degrees of freedom in Weyl semimetals as an axial magnetic field (chiral gauge field), which in turn affects their impurity dominated diffusive transport. Here we study the longitudinal magnetoco
Publikováno v:
Physical Review B. 107
Autor:
Subramanian Mathimalar, Archit Bhardwaj, Biswarup Satpati, Saurabh Chaudhary, Satyaki Sasmal, Rajasekhar Pothala, Sekar Abhaya, Karthik V. Raman
Publikováno v:
npj Quantum Materials, Vol 5, Iss 1, Pp 1-6 (2020)
Proximity of a topological insulator (TI) surface with a magnetic insulator (MI) can open an exchange gap at the Dirac point leading to exploration of surface quantum anomalous Hall effect. An important requirement to observe the above effect is to p
Autor:
Suman Mundlia, Karthik V. Raman
Publikováno v:
Journal of Applied Physics. 132:043905
Exchange-bias as an interfacial phenomenon is extensively investigated in bilayer films of a ferromagnet (FM) and an antiferromagnet (AFM) with large internal magnetic anisotropy. This mechanism is also observable by replacing the AFM layer with a ha
A combination of out-of-plane and in-plane magnetoconductance (MC) study in topological insulators (TI) is often used as an experimental technique to probe weak anti-localization (WAL) response of the topological surface states (TSSs). However, in ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66c237a3c5b36655ec37d17b42a979d4
http://arxiv.org/abs/2106.07698
http://arxiv.org/abs/2106.07698
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 33(46)
A combination of out-of-plane (OOP) and in-plane (IP) magnetoconductance (MC) study in topological insulators (TI) is often used as an experimental technique to probe weak anti-localization (WAL) response of the topological surface states (TSSs). How
Planar Hall effect (PHE) in topological insulators (TIs) is discussed as an effect that stems mostly from conduction due to topologically protected surface states. Although surface states play a critical role and are of utmost importance in TIs, our
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::907cb6d23db888c96be41b9b5cad4707
http://arxiv.org/abs/2104.05246
http://arxiv.org/abs/2104.05246
The two dimensional kagome spin lattice structure of Mn atoms in the family of Mn$_3$X non-collinear antiferromagnets are providing substantial excitement in the exploration of Berry curvature physics and the associated non-trivial magnetotransport r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3806269972e2e60242e6e83b8d66bd36
http://arxiv.org/abs/2009.01011
http://arxiv.org/abs/2009.01011
Autor:
Satyaki Sasmal, Archit Bhardwaj, Janmey Jay Panda, Karthik V. Raman, Suman Mundlia, Saurabh Chaudhary, Lakshman Peri
Publikováno v:
Physical Review Applied. 14
Exchange-bias effect is a widely investigated topic for spintronic applications in magnetic data storage read heads and spin-valve sensors. This effect is observed in bilayers of magnetic materials comprising of a soft ferromagnet (FM) and an antifer