Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Karsthof, Robert Michael"'
Autor:
Bathen, Marianne Etzelmüller, Karsthof, Robert Michael, Galeckas, Augustinas, Kumar, Piyush, Kuznetsov, Andrej, Grossner, Ulrike, Vines, Lasse
Publikováno v:
Bathen, Marianne Etzelmüller Karsthof, Robert Michael Galeckas, Augustinas Kumar, Piyush Kuznetsov, Andrej Grossner, Ulrike Vines, Lasse . Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime. Materials Science in Semiconductor Processing. 2024, 176
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing
Externí odkaz:
http://hdl.handle.net/10852/110371
Autor:
Borgersen, Jon, Karsthof, Robert Michael, Rønning, Vegard, Vines, Lasse, Von Wenckstern, Holger, Grundmann, Marius, Kuznetsov, Andrej Yu., Johansen, Klaus Magnus Håland
Publikováno v:
Borgersen, Jon Karsthof, Robert Michael Rønning, Vegard Vines, Lasse Von Wenckstern, Holger Grundmann, Marius Kuznetsov, Andrej Yu. Johansen, Klaus Magnus Håland . Origin of enhanced conductivity in low dose ion irradiated oxides. AIP Advances. 2023
AIP Advances
AIP Advances
Externí odkaz:
http://hdl.handle.net/10852/99426
Autor:
Ghezellou, Misagh, Kumar, Piyush, Bathen, Marianne E., Karsthof, Robert Michael, Sveinbjörnsson, Einar Ö., Grossner, Ulrike, Bergman, J. Peder, Vines, Lasse, Ul-Hassan, Jawad
Publikováno v:
Ghezellou, Misagh Kumar, Piyush Bathen, Marianne E. Karsthof, Robert Michael Sveinbjörnsson, Einar Ö. Grossner, Ulrike Bergman, J. Peder Vines, Lasse Ul-Hassan, Jawad . The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers. APL Materials. 2023, 11(3)
APL Materials
APL Materials
Externí odkaz:
http://hdl.handle.net/10852/109782
Autor:
Langørgen, Amanda, Frodason, Ymir Kalmann, Karsthof, Robert Michael, Von Wenckstern, Holger, Jensen, Ingvild Julie Thue, Vines, Lasse, Grundmann, Marius
Publikováno v:
Langørgen, Amanda Frodason, Ymir Kalmann Karsthof, Robert Michael Von Wenckstern, Holger Jensen, Ingvild Julie Thue Vines, Lasse Grundmann, Marius . Defect level in κ-Ga2O3 revealed by thermal admittance spectroscopy. Jo
Jo
Jo
Externí odkaz:
http://hdl.handle.net/10852/109987
Publikováno v:
Karsthof, Robert Michael Bathen, Marianne Etzelmüller Kuznetsov, Andrej Vines, Lasse . Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC. Jo
Jo
Jo
Externí odkaz:
http://hdl.handle.net/10852/90988
https://www.duo.uio.no/bitstream/handle/10852/90988/1/Ci_injection_revised_clean.pdf
https://www.duo.uio.no/bitstream/handle/10852/90988/1/Ci_injection_revised_clean.pdf
Publikováno v:
Bathen, Marianne Etzelmüller Karsthof, Robert Michael Grossner, Ulrike Vines, Lasse . Stability, Evolution and Diffusion of Intrinsic Point Defects in 4H-SiC. Materials Science Forum. 2022, 1062, 371-375
Materials Science Forum
Materials Science Forum
Externí odkaz:
http://hdl.handle.net/10852/99724
Autor:
Langørgen, Amanda, Zimmermann, Christian, Frodason, Ymir Kalmann, Verhoeven, Espen Førdestrøm, Weiser, Philip Michael, Karsthof, Robert Michael, Basile Varley, Joel, Vines, Lasse
Publikováno v:
Langørgen, Amanda Zimmermann, Christian Frodason, Ymir Kalmann Verhoeven, Espen Førdestrøm Weiser, Philip Michael Karsthof, Robert Michael Basile Varley, Joel Vines, Lasse . Influence of heat treatments in H2 and Ar on the E1 center in β-Ga2O3. Jo
Jo
Jo
Externí odkaz:
http://hdl.handle.net/10852/99722
Akademický článek
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Autor:
Bathen, Marianne Etzelmüller, Galeckas, Augustinas, Karsthof, Robert Michael, Delteil, Aymeric, Sallet, Vincent, Kuznetsov, Andrej, Vines, Lasse
Publikováno v:
Bathen, Marianne Etzelmüller Galeckas, Augustinas Karsthof, Robert Michael Delteil, Aymeric Sallet, Vincent Kuznetsov, Andrej Vines, Lasse . Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide. Physical review B (PRB). 2021, 104
Physical review B (PRB)
Physical review B (PRB)
Externí odkaz:
http://hdl.handle.net/10852/93134
https://www.duo.uio.no/bitstream/handle/10852/93134/5/PhysRevB.104.045120.pdf
https://www.duo.uio.no/bitstream/handle/10852/93134/5/PhysRevB.104.045120.pdf