Picosecond multilevel resistive switching in tantalum oxide thin films

Autor: Viktor Havel, Vikas Rana, Rainer Waser, Ulrich Böttger, Stephan Menzel, Karsten Fleck, Moritz von Witzleben

Publikováno v: Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific reports 10, 16391 (2020). doi:10.1038/s41598-020-73254-2
Scientific reports 10(1), 16391 (2020). doi:10.1038/s41598-020-73254-2

The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive switch rep

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::083387204918c257467e6e915860a67f
https://doi.org/10.1038/s41598-020-73254-2

Effect of RESET Voltage on Distribution of SET Switching Time of Bipolar Resistive Switching in a Tantalum Oxide Thin Film

Autor: Ulrich Böttger, Rainer Waser, Yoshifumi Nishi, Karsten Fleck, Stephan Menzel

Publikováno v: IEEE Transactions on Electron Devices. 62:1561-1567

The distribution of SET switching time of bipolar switching tantalum oxide thin films is studied using pulse measurement techniques. SET switching times are measured by repeating SET and RESET operations in a single cell. It is found that the distrib

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f759b826b47b85c816621e45d37f632f
https://doi.org/10.1109/ted.2015.2411748

Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides

Autor: Stephan Menzel, Camilla La Torre, Ulrich Böttger, Nabeel Aslam, Susanne Hoffmann-Eifert, Karsten Fleck

Publikováno v: Physical review applied 6(6), 064015 (2016). doi:10.1103/PhysRevApplied.6.064015

Identifying limiting factors is crucial for a better understanding of the dynamics of the resistive switching phenomenon in transition-metal oxides. This improved understanding is important for the design of fast-switching, energy-efficient, and long

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a02e7ea6750fdab411ce126ae6f1f7e8
https://doi.org/10.1103/physrevapplied.6.064015

Ultrafast switching in Ta2O5-based resistive memories

Autor: Rainer Waser, Stephan Menzel, Bernd Rösgen, Ulrich Böttger, Viktor Havel, Vikas Rana, Karsten Fleck

Publikováno v: 2016 IEEE Silicon Nanoelectronics Workshop (SNW).

To understand the switching mechanism in resistive switching memories it is important to study the switching kinetics over several orders in time. One open question is the upper limit of the switching speed. In this study, we present a switching kine

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b78e922e2d6e9d8f0ecaaa7b6160cbd5
https://doi.org/10.1109/snw.2016.7577995

Interrelation of Sweep and Pulse Analysis of the SET Process in SrTiO3 Resistive Switching Memories

Autor: Stephan Menzel, Karsten Fleck, Ulrich Böttger, Rainer Waser

Publikováno v: IEEE Electron Device Letters. 35:924-926

In this letter, we present a study of the SET kinetics of bipolar switching SrTiO 3 -based resistive memory devices. Pulse measurements on a timescale from 1 μs to 1 s and voltage sweeps with sweep-rates up to 6 MV/s were performed showing a highly

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e618d61e9fe6428f4572ac5c23256a13
https://doi.org/10.1109/led.2014.2340016