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The results of the study of silicon alloyed with Ni and Se atoms are given. The introduction of nickel was carried out by dusting the silicon surface and then by “low temperature” diffusion for 0.5 h at T = 1150˚C. Additional heat treatment of N
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https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc6b7b47e7726348b6cc8444a0e8548c
