Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Kars Zeger Troost"'
Autor:
Rudy Peeters, Eelco van Setten, Jo Finders, Judon Stoeldraijer, Peter Kuerz, Ruben Maas, Kars Zeger Troost, Thomas Stammler, Paul Graeupner, Sjoerd Lok, Jos Benschop, Jan van Schoot
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2021.
While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are being applied in high volume manufacturing, ASML and ZEISS are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55. The purpose of this so-called h
Autor:
Eelco van Setten, Winfried Kaiser, Judon Stoeldraijer, Jos Benschop, Peter Kuerz, Paul Graeupner, Ruben Maas, Rudy Peeters, Jan van Schoot, Kars Zeger Troost, Jo Finders, Sjoerd Lok
Publikováno v:
Extreme Ultraviolet Lithography 2020
SPIE Photomask Technology + EUV Lithography
SPIE Photomask Technology + EUV Lithography
While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are entering high volume manufacturing, ASML and ZEISS are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55. The intent of this high-NA scanner, tar
Autor:
Laurens de Winter, Timur Tudorovskiy, Joerg Zimmermann, Erwin Stinstra, Bartosz Bilski, Jan van Schoot, Kars Zeger Troost, Stephen Hsu, Toralf Gruner, Ruediger Mack, Paul Graeupner, Juergen Mueller
Publikováno v:
Extreme Ultraviolet Lithography 2020.
The high NA=0.55 EUV scanner has an obscuration in the pupil. This has led to the choice to expand the aberration wave-front not in Zernikes anymore, but in other, orthogonal, basis-functions instead. The reasons for this choice and the description o
Autor:
Mark John Maslow, Vincent Wiaux, Eric Hendrickx, Joost Bekaert, Tatiana Kovalevich, Julien Ryckaert, Laurens de Winter, Kars Zeger Troost, Ming-Chun Tien, Natalia Davydova, Pieter Woltgens
Publikováno v:
Extreme Ultraviolet Lithography 2020.
Anamorphic imaging enables NA=0.55 in future EUV systems. At unchanged reticle size, the maximum on-wafer image size is reduced from the today’s full-field to a half-field of 26mm by16.5mm. Though most of the applications use a chip smaller than a
Autor:
Sjoerd Lok, Lars Wischmeier, Jos Benschop, Rudy Peeters, Judon Stoeldraijer, Winfried Kaiser, Peter Kuerz, Eelco van Setten, Joerg Zimmerman, Kars Zeger Troost, Jan van Schoot, Paul Graeupner
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are entering high volume manufacturing, ASML and ZEISS are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55. The intent of this high-NA scanner, tar
Autor:
Jan van Schoot, Eelco van Setten, Kars Zeger Troost, Paul Graeupner, Rudy Peeters, Judon Stoeldraijer, Peter Kuerz, Jos Benschop, Joerg Zimmermann, Winfried Kaiser, Sjoerd Lok
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2019
While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are readying to start high volume manufacturing, ASML and ZEISS are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55. The purpose of this high-NA sc
Autor:
Jan van Schoot, Eelco van Setten, Jo Finders, Joerg Zimmermann, Judon Stoeldraijer, Peter Kuerz, Frank Bornebroek, Marco Pieters, Kars Zeger Troost, Winfried Kaiser, Sjoerd Lok, Rob van Ballegoij, Paul Graeupner
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X
While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are readying to start high volume manufacturing, ASML and ZEISS are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55. The purpose of this high-NA sc
Autor:
Jan van Schoot, Kars Zeger Troost, Sascha Migura, Tilmann Heil, Jos Benschop, Hans Meiling, Sjoerd Lok, Jo Finders, Peter Krabbendam, Rob van Ballegoij, Judon Stoeldraijer, Eelco van Setten, Peter Kuerz, Bernhard Kneer, Winfried Kaiser, Frank Bornebroek
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX
While 0.33NA EUV systems are readying to start volume manufacturing, ASML and Zeiss are ramping up development activities on a 0.55NA EUV exposure tool, extending Moore’s law throughout the next decade. A novel, anamorphic lens design, has been dev
Autor:
John Zimmerman, Kars Zeger Troost, Sascha Migura, Koen van Ingen Schenau, Winfried Kaiser, Jens Timo Neumann, Gerardo Bottiglieri, Bernhard Kneer, Jan van Schoot
Publikováno v:
Photomask Technology 2015
EUV lithography for resolution below 8 nm half pitch requires the numerical aperture (NA) of the projection lens to be significantly larger than the current state-of-the-art 0.33NA. In order to be economically viable, a throughput in the range of 100
Autor:
Jens Timo Neumann, Jan van Schoot, Eelco van Setten, Gijsbert Rispens, Winfried Kaiser, Bernhard Kneer, Kars Zeger Troost, Sascha Migura
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 16:1
Current extreme ultraviolet (EUV) projection lithography systems exploit a projection lens with a numerical aperture (NA) of 0.33. It is expected that these will be used in mass production in the 2018/2019 timeframe. By then, the most difficult layer