Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Karolis Stašys"'
Autor:
Martynas Sapurov, Algirdas Baskys, Kazimieras Slivka, Vytautas Bleizgys, Karolis Stasys, Rimantas Simniskis, Valerijus Zlosnikas, Kęstutis Urbonas, Aldas Dervinis, Sarunas Paulikas, Nerijus Paulauskas, Raimondas Pomarnacki, Darius Gursnys, Leslav Mazeiko, Violeta Cymliakova, Pavel Piatrou, Justas Dilys
Publikováno v:
Heliyon, Vol 10, Iss 21, Pp e39862- (2024)
In this work the investigation results of harvesting the RF energy of a 2.4 GHz Wi-Fi signal for supply of smart home leak sensors network are presented. The collected RF energy has been used as an additional source to power the sensors. The main goa
Externí odkaz:
https://doaj.org/article/af7d0c80b488420c9c8f51abddb1f02f
Publikováno v:
Japanese Journal of Applied Physics. 62:040903
InAsBi layers with different bismuth content were grown on InAs substrates by solid source MBE. The amount of bismuth incorporated in the layers was estimated using X-ray diffraction measurements. The relaxation degree of the grown crystalline layers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b2e4197656289f74d5cd75704bf9f5e
https://doi.org/10.35848/1347-4065/acc777
https://doi.org/10.35848/1347-4065/acc777
Autor:
Renata Butkutė, Bronislovas Čechavičius, Algirdas Jasinskas, J. Devenson, Evelina Dudutienė, Vladimir Agafonov, Karolis Stašys, Simona Pūkienė
Publikováno v:
Frontiers in Optics + Laser Science APS/DLS.
In this work we are focusing on the semiconductor lasers based on AIII-B5-Bi, namely bismides, alloy grown by molecular beam epitaxy. Bismide semiconductor laser diodes have a potential to become the foundation of optical systems for automotive appli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8935602a85cd459b6abec896b1fb71df
https://doi.org/10.1364/fio.2019.jtu3a.13
https://doi.org/10.1364/fio.2019.jtu3a.13
Autor:
Vaidas Pačebutas, Rokas Kondrotas, A. Geižutis, Bronislovas Čechavičius, Renata Butkutė, Karolis Stašys, Arūnas Krotkus
Publikováno v:
Optical and Quantum Electronics. 47:873-882
The strong photoluminescence (PL) signal at wavelengths ranging from 1,300 to 1,500 nm was observed in GaAsBi epitaxial layers grown by migration-enhanced epitaxy and annealed at $$600\,^{\circ }\hbox {C}$$ and higher temperatures. PL measurements at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70413bf52ec3d0bcd702bd84c299fc5e
https://doi.org/10.1007/s11082-014-0019-8
https://doi.org/10.1007/s11082-014-0019-8