Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Karolina Pągowska"'
Autor:
Kozubal Maciej, A., Karolina, Pągowska, Andrzej, Taube, Renata, Kruszka, Monika, Masłyk, Kamińska, Eliana
Publikováno v:
In Materials Science in Semiconductor Processing 1 August 2022 146
Akademický článek
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Autor:
Anna Szerling, Andrzej Taube, Maciej Kaminski, Marek Ekielski, Jarosław Tarenko, Karolina Pągowska, Maciej Kozubal, Kamil Kosiel, Renata Kruszka, Krystyna Golaszewska-Malec, Ernest Brzozowski, Norbert Kwietniewski, Ryszard Kisiel
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::499eef8b080173fa26740ee678489148
https://doi.org/10.1117/12.2611724
https://doi.org/10.1117/12.2611724
Autor:
K. Gołaszewska-Malec, Artur Trajnerowicz, Andrzej Taube, Elżbieta Dynowska, Karolina Pągowska, Adam Barcz, Renata Kruszka, Rafal Jakiela, Michal Kozubal
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 450:248-251
In this work, the Si+ doping of undoped GaN (n ∼1 × 1016 cm−3) on sapphire by a single step implantation or sequential implantation/recrystallization processes, to a total fluence of 1 × 1016 at/cm2 and subsequent activation annealing at 1100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a51141072bb0060fb2c957ef9a5f143
https://doi.org/10.1016/j.nimb.2018.03.028
https://doi.org/10.1016/j.nimb.2018.03.028
Autor:
A. Piotrowska, Michal Kozubal, Andrzej Taube, Karolina Pągowska, Rafal Jakiela, Marek Guziewicz, K. Gołaszewska-Malec, Renata Kruszka
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 444:74-79
In this work, we compared ion implantation n-type doping processes in GaN using Si+ or Ge+ ions, by conducting structural and electrical characterization. In the case of Ge+ implantation processes, we compared both the standard single implantation an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2942e6cae983dfff06be9ffad21db550
https://doi.org/10.1016/j.nimb.2019.01.053
https://doi.org/10.1016/j.nimb.2019.01.053
Autor:
Renata Kruszka, Maciej Kozubal, Adam Barcz, Anna Szerling, Marek Guziewicz, Kamil Kosiel, Karolina Pągowska, Marcin Myśliwiec, Rafal Jakiela
Publikováno v:
Materials Science in Semiconductor Processing. 74:88-97
Ion implantation can be applied to form the electrical isolation in AlGaAs/GaAs Quantum Cascade Laser (QCL) instead of mesa etching. In this paper, we present in detail the designing of hydrogen implant isolation scheme, alongside with its verificati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3060d2f820c00b09a927cd5835632e30
https://doi.org/10.1016/j.mssp.2017.10.016
https://doi.org/10.1016/j.mssp.2017.10.016
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Renata Kruszka, Norbert Kwietniewski, Maciej Kozubal, Maciej Kamiński, Andrzej Taube, Karolina Pągowska, M. Juchniewicz, Anna Szerling
Publikováno v:
Materials Science in Semiconductor Processing. 127:105694
This work presents the development of Fe ion implantation processes for the fabrication of thermally stable isolation of AlGaN/GaN high electron mobility transistors (HEMTs). Experiments, carried out by the triple Fe+ implantation into AlGaN/GaN HEMT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5072139553b81a9bc15fb978c8fcc838
https://doi.org/10.1016/j.mssp.2021.105694
https://doi.org/10.1016/j.mssp.2021.105694
Autor:
Michał A. Borysiewicz, Michal Kozubal, Rafal Jakiela, Jacek Ratajczak, Karolina Pągowska, Elżbieta Dynowska, Jan Dyczewski, Elzbieta Guziewicz, Adam Barcz, D. Snigurenko
Publikováno v:
Acta Physica Polonica A. 128:832-835
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a3165f8d9e858ff05df7ab47ba5195e
https://doi.org/10.12693/aphyspola.128.832
https://doi.org/10.12693/aphyspola.128.832
Publikováno v:
Acta Physica Polonica A. 129:150-152
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75e0a85fb6b28dcb3e89dd0208bd38e2
https://doi.org/10.12693/aphyspola.129.150
https://doi.org/10.12693/aphyspola.129.150