Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Karo Safaryan"'
Publikováno v:
ALTERNATIVE. :102-107
Multibit digital comparators take up large surface and high power consumption. As they are composed of logic gates, it is recommended to decrease the number of transistors in the logic gates using different transistor logics. By decreasing the number
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55658f00e62e23830efc26e925731319
https://doi.org/10.55528/18292828-2022.1-102
https://doi.org/10.55528/18292828-2022.1-102
Autor:
Artur Petrosyan, Mher Bazikyan, Karo Safaryan, Garik Hakobyan, Fadey Aslikyan, Stepan Harutyunyan
Publikováno v:
2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO).
CMOS scaling affects to sub-threshold leakage, gate leakage and device variations growth leakage current. Static Random Access Memory (SRAM) cell is engaged the most area of Integrated Circuit (IC). It has been implemented FinFET bitcell, which leaka
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c3fb247813095872a63c5e19645b12f
https://doi.org/10.1109/elnano.2019.8783371
https://doi.org/10.1109/elnano.2019.8783371
Publikováno v:
2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO).
Anapproach of low power XOR gate is presented. Comparison has been done for traditional XOR and XOR heavysystems like binary to gray converter, parity checker. There are significant improvements in power consumption and area with cost of increaseddel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96474e3bbc2e4d8b05e70c0c78456db9
https://doi.org/10.1109/elnano.2019.8783721
https://doi.org/10.1109/elnano.2019.8783721