Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Karla KULDOVÁ"'
Autor:
Sara Gleco, Oleksandr Romanyuk, Ivan Gordeev, Karla Kuldová, Tania Paskova, Albena Ivanisevic
Publikováno v:
ACS Omega, Vol 4, Iss 7, Pp 11760-11769 (2019)
Externí odkaz:
https://doaj.org/article/c481fb3e330e48ceae874065c7b91d70
Autor:
František Hájek, Vitezslav Jarý, Tomáš Hubáček, Filip Dominec, Alice Hospodková, Karla Kuldová, Jiří Oswald, Jiří Pangrác, Tomáš Vaněk, Maksym Buryi, Christophe Dujardin, Gilles Ledoux
Publikováno v:
ECS Journal of Solid State Science and Technology.
We report luminescence decay characteristics of the InGaN/GaN scintillator heterostructures doped with Zn. Unusually large shifting of luminescence band caused by Zn acceptors incorporated in InGaN is observed both in time-resolved and excitation-dep
Autor:
Alice Hospodková, František Hájek, Tomáš Hubáček, Zuzana Gedeonová, Pavel Hubík, Jiří J. Mareš, Jiří Pangrác, Filip Dominec, Karla Kuldová, Eduard Hulicius
Publikováno v:
Journal of Crystal Growth. 605:127061
Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers
Autor:
Alice Hospodková, Jakub Čížek, František Hájek, Tomáš Hubáček, Jiří Pangrác, Filip Dominec, Karla Kuldová, Jan Batysta, Maciej O. Liedke, Eric Hirschmann, Maik Butterling, Andreas Wagner
Publikováno v:
Materials; Volume 15; Issue 19; Pages: 6916
A set of GaN layers prepared by metalorganic vapor phase epitaxy under different technological conditions (growth temperature carrier gas type and Ga precursor) were investigated using variable energy positron annihilation spectroscopy (VEPAS) to fin
Autor:
Karla Kuldová, Tania Paskova, Albena Ivanisevic, Ivan Gordeev, Oleksandr Romanyuk, Sara Gleco
Publikováno v:
ACS Omega, Vol 4, Iss 7, Pp 11760-11769 (2019)
The surface properties of biomolecular gradients are widely known to be important for controlling cell dynamics, but there is a lack of platforms for studying them in vitro using inorganic materials. The changes in various surface properties of an Al
Autor:
Gilles Ledoux, Alice Hospodková, Karla Kuldová, František Hájek, Jiri Oswald, Markéta Zíková, Tomáš Hubáček, Jiří Pangrác, Christophe Dujardin
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2019, 506, pp.8-13. ⟨10.1016/j.jcrysgro.2018.10.013⟩
Journal of Crystal Growth, Elsevier, 2019, 506, pp.8-13. ⟨10.1016/j.jcrysgro.2018.10.013⟩
International audience; In this work, the influence of Si doping position on the photoluminescence (PL) properties of InGaN/GaN quantum wells (QWs) is studied. A set of samples with different positions of Si doping with respect to the multi quantum w
Autor:
Tomáš Vaněk, Vítězslav Jarý, Tomáš Hubáček, František Hájek, Karla Kuldová, Zuzana Gedeonová, Vladimír Babin, Zdeněk Remeš, Maksym Buryi
Publikováno v:
Journal of Alloys and Compounds. 914:165255
Autor:
Eduard HULICIUS, František HÁJEK, Alice HOSPODKOVÁ, Pavel HUBÍK, Zuzana GEDEONOVÁ, Tomáš HUBÁČEK, Jiří PANGRÁC, Karla KULDOVÁ
Publikováno v:
NANOCON 2021 Conference Proeedings.
Autor:
Alice Hospodková, Jiří Pangrác, Markéta Zíková, Tomáš Hubáček, František Hájek, F. Dominec, Karla Kuldová, Aliaksei Vetushka, Stanislav Hasenöhrl
Publikováno v:
Lithuanian Journal of Physics. 59
In this work the mechanism which helps to reduce the dislocation density by deposition of a SiNx interlayer is discussed. It is shown that the dislocation reduction by SiNx interlayer deposition is influenced by dislocation density in the underlying
Autor:
Jiří Pangrác, František Hájek, Alice Hospodková, Jiří Oswald, Tomáš Vaněk, F. Dominec, Tomáš Hubáček, Karla Kuldová
Publikováno v:
NANOCON Conference Proeedings.