Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Karla Hillerich"'
Autor:
Kimberly A. Dick, Jerry Tersoff, Karla Hillerich, Mark C. Reuter, Frances M. Ross, Yi-Chia Chou
Publikováno v:
Science. 343:281-284
Regular Nanowires For a range of nanotechnology applications, semiconductor nanowires will need to be grown with high precision and control. Chou et al. (p. 281 ) studied the growth of gallium phosphide (GaP) nanowires using chemical vapor deposition
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 7:850-854
We demonstrate the epitaxial growth of alternating InP-InAs nanowire heterostructures using Cu seed particles in MOVPE. We observe extraordinary early stages in the formation of InAs segments, e.g. three-dimensional nucleation instead of step-flow gr
Publikováno v:
Nano Research. 5:297-306
We report on epitaxial growth of InP nanowires (NWs) from Cu seed particles by metal-organic vapor phase epitaxy (MOVPE). Vertically-aligned straight nanowires can be achieved in a limited temperature range between 340 A degrees C and 370 A degrees C
Publikováno v:
Journal of Crystal Growth. 315:134-137
Cu-seeded epitaxial growth of vertically aligned InP nanowires is reported for the first time. The nanowires were grown at temperatures between 290 and 420 degrees C by metal-organic vapor phase epitaxy (MOVPE) from particles formed from Cu thin film
Autor:
Anders Mikkelsen, Anil W. Dey, Knut Deppert, Emelie Hilner, Julian Stangl, Günther Bauer, Karla Hillerich, Bernhard Mandl, Lars Samuelson, Alexei Zakharov
Publikováno v:
Nano Letters
Group III−V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impur
Autor:
Knut Deppert, Kristian Storm, Kimberly A. Dick, Maria E. Messing, Jessica Bolinsson, Karla Hillerich, Jonas Johansson
Publikováno v:
Nano Research. 3:506-519
Highly controlled particle-assisted growth of semiconductor nanowires has been performed for many years, and a number of novel nanowire-based devices have been demonstrated. Full control of the epitaxial growth is required to optimize the performance
Publikováno v:
Gold Bulletin
ResearcherID
Lund University
ResearcherID
Lund University
A common application of nanometer-sized gold particles is as seed particles for growth of semiconductor nanowires, which are believed to act as highly promising building blocks in future electronic devices. In a majority of the reports of successful
Autor:
C.-Y. Wen, Suneel Kodambaka, Karla Hillerich, Mark C. Reuter, Frances M. Ross, Kimberly A. Dick
Publikováno v:
Nano letters. 13(3)
By combining in situ and ex situ transmission electron microscopy measurements, we examine the factors that control the morphology of “hybrid” nanowires that include group III–V and group IV materials. We focus on one materials pair, GaP/Si, fo
Autor:
C.-Y. Wen, Frances M. Ross, Jerry Tersoff, Eric A. Stach, Jeung Hun Park, Suneel Kodambaka, Mark C. Reuter, Karla Hillerich
Publikováno v:
Physical Review Letters. 107
Nanowire growth in the standard111direction is assumed to occur at a planar catalyst-nanowire interface, but recent reports contradict this picture. Here we show that a nonplanar growth interface is, in fact, a general phenomenon. Both III-V and grou
Autor:
Karla Hillerich, Cynthia A. Volkert, Oliver Kraft, Reiner Mönig, Gunther Richter, Daniel Gianola
Publikováno v:
Nano letters. 9(8)
The strength of metal crystals is reduced below the theoretical value by the presence of dislocations or by flaws that allow easy nucleation of dislocations. A straightforward method to minimize the number of defects and flaws and to presumably incre