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pro vyhledávání: '"Karla Bernal Ramos"'
Publikováno v:
Chemistry of Materials. 27:4943-4949
Atomic layer deposition of cobalt silicide (CoSi2) thin films on H-terminated Si(111) surfaces, using the cobalt-based precursor tertiarybutylallylcobalttricarbonyl (tBu-AllylCo(CO)3) and trisilane, is investigated by in situ Fourier transform infrar
Publikováno v:
Coordination Chemistry Reviews. 257:3271-3281
Deposition of thin films with desired compositions, conformality and bonding to substrates is a key component in nanotechnology research. The growth of metal films by atomic layer deposition (ALD) has become an important field of study due to its wid
Autor:
Karla Bernal Ramos, Nicola Pinna, Wilfredo Cabrera, Yves J. Chabal, Catherine Marichy, Guylhaine Clavel
Publikováno v:
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
The mechanisms of growth of TiO2 thin films by atomic layer deposition (ALD) using either acetic acid or ozone as the oxygen source and titanium isopropoxide as the metal source are investigated by in situ Fourier transform infrared spectroscopy (FTI