Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing

Autor: Xiaomo Xu, Thomas Prüfer, Daniel Wolf, Hans-Jürgen Engelmann, Lothar Bischoff, René Hübner, Karl-Heinz Heinig, Wolfhard Möller, Stefan Facsko, Johannes von Borany, Gregor Hlawacek

Publikováno v: Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 2883-2892 (2018)

For future nanoelectronic devices – such as room-temperature single electron transistors – the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-

Externí odkaz: https://doaj.org/article/5156d91379fe4eba94329c4846b8921b

Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration

Autor: P. Brianceau, M. Rommel, Hans-Jürgen Engelmann, M.-L. Pourteau, J. von Borany, F. Laulagnet, Guido Rademaker, J.-A. Dallery, Ahmed Gharbi, L. Baier, Karl-Heinz Heinig, Raluca Tiron

Publikováno v: Micro and Nano Engineering
Micro and Nano Engineering, Elsevier, 2020, 9, https://doi.org/10.1016/j.mne.2020.100074. ⟨10.1016/j.mne.2020.100074⟩
Micro and Nano Engineering, 2020, 9, https://doi.org/10.1016/j.mne.2020.100074. ⟨10.1016/j.mne.2020.100074⟩
Micro and Nano Engineering 9(2020), 100074
Micro and Nano Engineering, Vol 9, Iss, Pp 100074-(2020)

International audience; SETs (Single-Electron-Transistors) arouse growing interest for their very low energy consumption. For future industrialization, it is crucial to show a CMOS-compatible fabrication of SETs, and a key prerequisite is the pattern

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ffaa0176ed92185b48dbaa77d24531d
https://hal-cea.archives-ouvertes.fr/cea-03409432

Collision cascades enhanced hydrogen redistribution in cobalt implanted hydrogenated diamond-like carbon films

Autor: Grant V. M. Williams, Karl-Heinz Heinig, Prasanth Gupta, René Hübner, Andreas Markwitz, Hans Werner Becker

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 394:6-11

Hydrogenated diamond-like carbon films produced by C 3 H 6 deposition at 5 kV and implanted at room temperature with 30 keV Co atoms to 12 at.% show not only a bimodal distribution of Co atoms but also a massive redistribution of hydrogen in the film

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ad6dbc28789cb7bfaf48d94f14a5aae6
https://doi.org/10.1016/j.nimb.2016.12.029

Morphology modifcation of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm

Autor: Ahmed Gharbi, Karl-Heinz Heinig, Johannes von Borany, Hans-Jürgen Engelmann, Wolfhard Möller, Raluca Tiron, Nico Klingner, Gregor Hlawacek, Xiaomo Xu

Publikováno v: Semiconductor Science and Technology 35(2020)1, 015021
Semiconductor Science and Technology

Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne+ beam. The morphological changes due to ion beam irradiation at room temperature and elevated temperatures have been studied with the transmi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25a3fdcd6f35e7f7f2c07abc9820ec76

Faceted nanostructure arrays with extreme regularity by self-assembly of vacancies

Autor: Xin Ou, Karl-Heinz Heinig, Manfred Helm, Xi Wang, René Hübner, Stefan Facsko, Jörg Grenzer, Jürgen Fassbender

Publikováno v: Nanoscale. 7:18928-18935

Semiconductor quantum dots and wires are important building blocks for future electronic and optoelectronic devices. The common way of producing semiconductor nanostructures is by molecular beam epitaxy (MBE). In this additive growth process atoms ar

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7235fc3b7c521681717c523d3d5f149e
https://doi.org/10.1039/c5nr04297f