Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Karl-Heinz Bach"'
Autor:
Karl-Heinz Bach, M. Galiano, Manfred Eller, Richard A. Conti, R. Lindsay, A.T. Tilke, William C. Wille, Chris Stapelmann, A. Jain, Roland Hampp, R. Jaiswal
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 20:59-67
In the present work, a high aspect ratio process (HARP) using a new O3/TEOS based sub atmospheric chemical vapor deposition process was implemented as STI gapfill in sub-65-nm CMOS. Good gapfill performance up to aspect ratios greater than 10:1 was d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb17de55455adecfd3578ae1b7747b9d
https://doi.org/10.1109/tsm.2007.896632
https://doi.org/10.1109/tsm.2007.896632
Publikováno v:
IEEE transactions on electron devices 62(8), 2614-2619 (2015). doi:10.1109/TED.2015.2446132
Avalanche breakdown can occur during switching of power devices and is difficult to simulate due to its abrupt onset and strong nonlinear behavior. In addition, it severely degrades the numerical robustness of deterministic solvers for the Boltzmann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35b3d9bf10f23988cb3ac892389e8c72
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
In this paper we present a mechanism leading to early fails in a trench power MOSFET when operated at high drain currents under repetitive avalanche conditions (also referred to as “unclamped inductive switching”). While typical fails show burn m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e60f8fbddeb01bba65c6c020d928069
https://doi.org/10.1109/ispsd.2012.6229036
https://doi.org/10.1109/ispsd.2012.6229036
Publikováno v:
Simulation of Semiconductor Processes and Devices 2007 ISBN: 9783211728604
Stressed etch stop liners (ESL) are a common way to increase device performance. Here we investigate the layout dependent channel stress for mono- and multi-layer deposition. By means of empirical pseudopotential method full band structures are calcu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96af085c9fce041a1b3afac9a7ba9ffd
https://doi.org/10.1007/978-3-211-72861-1_27
https://doi.org/10.1007/978-3-211-72861-1_27
Publikováno v:
2006 International Conference on Simulation of Semiconductor Processes and Devices.
Stress engineering to enhance device performance has become widespread. One way is to apply an etch stop liner with intrinsic stress, which causes stress and thus changed mobility in the channel of the device. Etching contact holes reduces this stres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b9e5db955eb97f784f29bb6578df305
https://doi.org/10.1109/sispad.2006.282866
https://doi.org/10.1109/sispad.2006.282866