Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Karl Rönnby"'
Publikováno v:
The Journal of Chemical Physics. 158
Indium nitride (InN) is an interesting material for future electronic and photonic-related applications, as it combines high electron mobility and low-energy band gap for photoabsorption or emission-driven processes. In this context, atomic layer dep
Autor:
Karl Rönnby
Publikováno v:
Linköping Studies in Science and Technology. Dissertations ISBN: 9789180750721
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b265cbf6cbf53ac1c42573cd75842744
https://doi.org/10.3384/9789180750738
https://doi.org/10.3384/9789180750738
Indium nitride (InN) is an interesting material for future electronic and photonic-related applications, as it combines high electron mobility and low-energy band gap for photoabsorption or emission-driven processes. In this context, atomic layer dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55d3223313910368fb2db5e1240d279b
https://doi.org/10.26434/chemrxiv-2023-vphs1
https://doi.org/10.26434/chemrxiv-2023-vphs1
Chemical vapor deposition of indium nitride (InN) is severely limited by the low thermal stability of the material, and, thus, low-temperature deposition processes such as atomic layer deposition (ALD) are needed to deposit InN films. The two chemica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59053058093b3f083329cf71604bac8c
https://doi.org/10.26434/chemrxiv-2022-s9dvr
https://doi.org/10.26434/chemrxiv-2022-s9dvr
Aluminum nitride (AlN), gallium nitride (GaN),and indium nitride (InN) form a family of technologicallyimportant semiconductors of high importance to light-emittingdiodes and high-frequency electronics. Although thinfilms of thesematerials are routin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9f1d84d471bf1af19af0f823eef7c1f
https://doi.org/10.26434/chemrxiv-2022-vd4v1
https://doi.org/10.26434/chemrxiv-2022-vd4v1
In recent decades, indium nitride (InN) has been attracting a great deal of attention for its potential applicability in the field of light-emitting diodes (LEDs) and high-frequency electronics. However, the contribution from adsorption- and reaction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d84a90981bd41291ddcd03a100e185f8
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-184437
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-184437
Autor:
Nathan J. O’Brien, Henrik Pedersen, Polla Rouf, Ivan Gueorguiev Ivanov, Lars Ojamäe, Karl Rönnby, Rouzbeh Samii
Publikováno v:
The Journal of Physical Chemistry C. 123:25691-25700
Indium nitride (InN) is an interesting material for future high-frequency electronics due to its high electron mobility. The problematic deposition of InN films currently prevents full exploration of InN-based electronics. We present studies of atomi
Kinetic modeling has been used to study the decomposition chemistry of ammonia at a wide range of temperatures, pressures, concentrations, and carrier gases mimicking the conditions in chemical vapor deposition (CVD) of metal nitrides. The modeling s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4612fc669b1c1b660b6d334e94c31c4f
https://doi.org/10.26434/chemrxiv.12408905
https://doi.org/10.26434/chemrxiv.12408905
Autor:
Rouzbeh Samii, Sydney C. Buttera, Lars Ojamäe, Ivan Gueorguiev Ivanov, Chih-Wei Hsu, Polla Rouf, Henrik Pedersen, Vadim G. Kessler, Karl Rönnby, Nathan J. O’Brien
Indium nitride (InN) is characterized by its high electron mobility, making it a ground-breaking material for high frequency electronics. The difficulty of depositing high-quality crystalline InN currently impedes its broad implementation in electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cec368a37469be9155b49b54c2760a74
https://pub.epsilon.slu.se/17321/
https://pub.epsilon.slu.se/17321/
Autor:
Nathan O'Brien, Polla Rouf, Rouzbeh Samii, Karl Rönnby, Sydney C. Buttera, Ivan G. Ivanov, Vadim Kessler, Lars Ojamäe, Henrik Pedersen
Indium nitride (InN) is characterised by its superb electron mobility making it a ground-breaking material for high frequency electronics. The difficulty of depositing highquality crystalline InN currently impedes its broad implementation in electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::80ac6effe87aa5e46fce4ae0d490affa
https://doi.org/10.26434/chemrxiv.10565588
https://doi.org/10.26434/chemrxiv.10565588