Zobrazeno 1 - 10
of 105
pro vyhledávání: '"Karl Opsomer"'
Autor:
Meiyi Wu, Jean-François de Marneffe, Karl Opsomer, Christophe Detavernier, Annelies Delabie, Philipp Naujok, Özge Caner, Andy Goodyear, Mike Cooke, Qais Saadeh, Victor Soltwisch, Frank Scholze, Vicky Philipsen
Publikováno v:
Micro and Nano Engineering, Vol 12, Iss , Pp 100089- (2021)
Ru4-xTax (x = 1,2,3) alloys are studied as absorber candidates for EUV low-n mask. We report the morphology, surface roughness as well as the chemical composition of the as-deposited alloy films for better theoretical model building of the EUVL absor
Externí odkaz:
https://doaj.org/article/7503fceb5da24fb2b89adb7b0e8f0604
Autor:
Vu Luong, Vicky Philipsen, Eric Hendrickx, Karl Opsomer, Christophe Detavernier, Christian Laubis, Frank Scholze, Marc Heyns
Publikováno v:
Applied Sciences, Vol 8, Iss 4, p 521 (2018)
Extreme ultraviolet (EUV) lithography is being industrialized as the next candidate printing technique for high-volume manufacturing of scaled down integrated circuits. At mask level, the combination of EUV light at oblique incidence, absorber thickn
Externí odkaz:
https://doaj.org/article/b0f1a5d806d64779ba1e19566d7153a5
Autor:
Jonas Keukelier, Ludovic Goux, Thomas Nuytten, Sergiu Clima, Stefanie Sergeant, Karl Opsomer, Wouter Devulder, Gouri Sankar Kar, Christophe Detavernier
Publikováno v:
JOURNAL OF MATERIALS CHEMISTRY C
Raman spectroscopy measurements are performed on sputtered GexSe1-x thin films to identify bond presence. A large amount of homopolar bonds are found, including Ge-Ge bonds that can be attributed to Ge clustering. A time-resolved approach to Raman sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6f958578c6d8dfd13ec649fb0cb7663
https://doi.org/10.1039/d0tc04086j
https://doi.org/10.1039/d0tc04086j
Autor:
Valeria Founta, Jean-Philippe Soulié, Kiroubanand Sankaran, Kris Vanstreels, Karl Opsomer, Pierre Morin, Pieter Lagrain, Alexis Franquet, Danielle Vanhaeren, Thierry Conard, Johan Meersschaut, Christophe Detavernier, Joris Van de Vondel, Ingrid De Wolf, Geoffrey Pourtois, Zsolt Tőkei, Johan Swerts, Christoph Adelmann
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::956d2de7d2438d87c22d241aaaaec21e
https://doi.org/10.2139/ssrn.4048681
https://doi.org/10.2139/ssrn.4048681
Autor:
Qais Saadeeh, Meiyi Wu, Vicky Philipsen, Philipp Naujok, Jean-Philippe Soulié, Robbert Wilhelmus Elisabeth van de Kruijs, Richard Ciesielski, Karl Opsomer, Michael Kolbe, Victor Soltwisch, Frank Scholze
Publikováno v:
Modeling Aspects in Optical Metrology VIII.
Development of efficient absorber masks and highly reflective mirrors in the EUV spectral range is a key challenge for upcoming lithography techniques in semiconductor technology. There is an improved need to precisely know the optical constants of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b48493e0309b4e64ca7928fe95cfaaf2
https://doi.org/10.1117/12.2592543
https://doi.org/10.1117/12.2592543
Publikováno v:
Journal of Materials Chemistry C. 7:4392-4402
The continuation of CMOS scaling leads to the necessity of replacing Cu as an interconnect material with a metal with lower resistivity and better reliability performance. At the same time, significant technological improvements are required to mitig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b3454bf1059b2f29d89a3d6e1d6e8de
https://doi.org/10.1039/c9tc00145j
https://doi.org/10.1039/c9tc00145j
Autor:
Meiyi Wu, Vicky Philipsen, Patrick Jaenen, Philipp Naujok, Qais Saadeh, Laurent Souriau, Andreas Erdmann, Hazem Mesilhy, Devesh Thakare, Jean-Philippe Soulié, Jean-Francois de Marneffe, Markus Foltin, Karl Opsomer, Victor Soltwisch
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 20
Novel mask absorber designs are catching the attention of the EUVL community due to their ability to mitigate mask 3D effects. Material selection is part of such an optimization. We propose several candidates as novel EUV lithography mask absorbers,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5eab56af96281f6e2209e21b52845ba
https://doi.org/10.1117/1.jmm.20.2.021002
https://doi.org/10.1117/1.jmm.20.2.021002
Autor:
Ludovic Goux, R. Delhougne, Gouri Sankar Kar, Sven Van Elshocht, Christophe Detavernier, Wouter Devulder, Matty Caymax, Jan Willem Maes, Gabriel Khalil El Hajjam, Jean-Marc Girard, Karl Opsomer, Ali Haider, Johan Swerts, Shaoren Deng, Annelies Delabie, Michael Eugene Givens
Publikováno v:
MATERIALS ADVANCES
The ovonic threshold switch (OTS) selector based on the voltage snapback of amorphous chalcogenides has received tremendous attention as it provides several desirable characteristics such as bidirectional switching, a controllable threshold voltage,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e62b93c2d6d50a27c2fe78d325d76509
https://hdl.handle.net/1854/LU-8706073
https://hdl.handle.net/1854/LU-8706073
Autor:
Jonas Keukelier, Sergiu Clima, Ludovic Goux, Karl Opsomer, Wouter Devulder, Christophe Detavernier, Gouri Sankar Kar
Publikováno v:
JOURNAL OF APPLIED PHYSICS
In order to make 3D crossbar memory architectures viable, selector elements with highly non-linear current-voltage characteristics are required. Ovonic Threshold Switching (OTS) is a highly non-linear phenomenon observed in amorphous chalcogenides, s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc02c7033a7f0cade983f70e5adaca8c
https://hdl.handle.net/1854/LU-8737018
https://hdl.handle.net/1854/LU-8737018
Autor:
Jean-Philippe Soulié, Karl Opsomer, Jean-Francois de Marneffe, Philipp Naujok, Devesh Thakare, Markus Foltin, Qais Saadeh, Victor Soltwisch, Andreas Erdmann, Hazem Mesilhy, Laurent Souriau, Meiyi Wu, Vicky Philipsen, Patrick Jaenen
Publikováno v:
Extreme Ultraviolet Lithography 2020
Novel mask absorber designs are calling attention of the EUVL community due to their ability to mitigate mask 3D effects. Material selection is part of such optimization [1]. In this paper we propose several candidates as novel EUV lithography mask a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22d3c4cdc6f35c40c3399935f626d790