Zobrazeno 1 - 10
of 401
pro vyhledávání: '"Karl Eberl"'
Autor:
O. G. Schmidt, Gerhard Abstreiter, Frank Ernst, Karl Eberl, K. Brunner, Jiangang Zhu, O. Kienzle
Publikováno v:
Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629
This article summarizes results of recent experiments aiming to produce self-assembled Ge quantum dots embedded in Si by molecular beam epitaxy. In these experimental studies, conventional and analytical transmission electron microscopy have played a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1237510c5d80bf5e58786ac6c15841a0
https://doi.org/10.1201/9781351074629-35
https://doi.org/10.1201/9781351074629-35
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 35:278-284
Semiconductor quantum dots, so-called artificial atoms, have attracted considerable interest as mesoscopic model systems and prospective building blocks of the “quantum computer”. Electrons are trapped locally in quantum dots, forming controllabl
Autor:
Hua Qin, Jörg P. Kotthaus, Robert H. Blick, Werner Wegscheider, Andreas K. Hüttel, Alexander W. Holleitner, Karl Eberl, Martin Bichler
Publikováno v:
physica status solidi (c). 1:2094-2110
Experimental results on both serial and parallel double quantum dots are presented. The quantum dots are realized in the two-dimensional electron gas of an AlGaAs/GaAs heterostructure. By varying the inter-dot tunnel barriers, double quantum dots are
Autor:
Robert H. Blick, Hua Qin, Jörg P. Kotthaus, Alexander W. Holleitner, Dietmar Weinmann, A. K. Huettel, Karl Eberl, K. Neumaier
Publikováno v:
Europhysics Letters (EPL). 62:712-718
We present measurements on spin blockade in a laterally integrated quantum dot. The dot is tuned into the regime of strong Coulomb blockade, confining ~ 50 electrons. At certain electronic states we find an additional mechanism suppressing electron t
Publikováno v:
Nanotechnology. 14:60-64
Using picosecond millimetre-wave impulses we probe the electronic structure and dynamics of electrons in a single quantum dot—the artificial atom—which is essential for understanding their applications such as computational elements and detectors
Publikováno v:
Solid State Ionics. :497-502
Ionic heterolayers of CaF 2 /BaF 2 /CaF 2 have been prepared by molecular beam epitaxy (MBE). The spacing has been varied from ∼1 nm to ∼1 μm. In the range of 1 μm to 5 nm, the conductivity (measured effective conductivity parallel to the inter
Autor:
V. E. Bisti, V. E. Kirpichev, K. von Klitzing, S. V. Tovstonog, I. V. Kukushkin, L. V. Kulik, Karl Eberl
Publikováno v:
Journal of Experimental and Theoretical Physics. 95:927-939
The spectrum of collective excitations in a quasi-two-dimensional electron system was studied by the method of Raman scattering spectroscopy. In an applied magnetic field, such systems exhibit collective excitations related to the electron transition
Autor:
H. Heidemeyer, R. Songmuang, Silke Christiansen, Heinz Schweizer, H. Gräbeldinger, C. Müller, Suwit Kiravittaya, Oliver G. Schmidt, Karl Eberl, Neng Yun Jin-Phillipp, Y. Nakamura, H. Wawra
Publikováno v:
Surface Science. 514:10-18
Different growth techniques and growth strategies are presented to climb up the hierarchy of order in the field of self-assembled semiconductor nanostructures. In a first step we report a significant improvement of the nanostructure size homogeneity
Autor:
H. Gräbeldinger, Carsten Müller, Suwit Kiravittaya, Neng Yun Jin-Phillipp, Karl Eberl, H. Schweizer, Oliver G. Schmidt, Yusui Nakamura
Publikováno v:
Journal of Crystal Growth. 242:339-344
We demonstrate vertical alignment of laterally ordered self-assembled quantum dot (QD) arrays stacked on artificially pre-patterned substrates with two-dimensional hole arrays. The initial InGaAs layer is directly grown on the periodically modulated
Publikováno v:
Semiconductor Science and Technology. 17:480-486
Non-specular x-ray reflectivity under grazing incidence is sensitive to the morphology of buried interfaces in multilayers. Using this method we have studied one-dimensional self-assembled patterns (ripples) occurring in Ge/Si superlattices. On the b