Zobrazeno 1 - 10
of 92
pro vyhledávání: '"Karl D. Hirschman"'
Publikováno v:
ECS Transactions. 98:131-139
Flash lamp annealing (FLA) has been explored as an alternative to excimer laser annealed low-temperature polycrystalline silicon (LTPS) for display applications and has shown potential to streamline and decrease the cost of fabrication while maintain
Publikováno v:
ECS Meeting Abstracts. :1282-1282
The invention of portable electronic devices had a huge impact on the growing interest in flat panel displays. Since the first report in 2004 on amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors (TFTs), many companies have become int
Publikováno v:
ECS Meeting Abstracts. :1260-1260
There is wide variation in the understanding of the interaction and/or independence of channel mobility and charge trapping in IGZO TFTs. A new interpretation of transport behavior proposes an intrinsic channel mobility with distinctive temperature d
Publikováno v:
ECS Transactions. 90:79-88
Autor:
Kevin S. Jones, Karl D. Hirschman, P. G. Whiting, Jayantha Senawiratne, J. Gregory Couillard, Johannes Moll, Robert George Manley, Carlo Kosik Williams
Publikováno v:
Journal of Materials Research. 34:1654-1668
A new deep level transient spectroscopy (DLTS) technique is described, called half-width at variable intensity analysis. This method utilizes the width and normalized intensity of a DLTS signal to determine the activation energy and capture cross sec
Autor:
Santosh K. Kurinec, Scott Williams, Glenn Packard, Karl D. Hirschman, Alex Taylor, Carolyn Spaulding
Publikováno v:
Materials Letters. 305:130780
We report doping of thin (~60 nm) amorphous silicon (a-Si) on glass substrate to form n + polycrystalline silicon on glass in selective regions using Monolayer doping (MLD) via Flash Lamp Annealing (FLA). The phosphorus monolayer was formed on the ex
Autor:
Robert George Manley, Glenn Packard, Viraj Garg, Paul Bischoff, Karl D. Hirschman, Karthik Bhadrachalam, Adam Rosenfeld
Publikováno v:
ECS Transactions. 86:57-72
The development of low-temperature polycrystalline silicon (LTPS) based on excimer laser annealing (ELA) has realized CMOS TFTs with notable electrical performance. The flat-panel display industry is searching for alternative LTPS strategies which ar
Autor:
Karl D. Hirschman, Jason Konowitch, Rahnuma Rifat Chowdhury, Prashant Ganesh, Julia Okvath, Robert George Manley, Muhammad Salahuddin Kabir, Harithshanmaa Sethupathi
Publikováno v:
ECS Transactions. 86:125-133
The focus of this work is on the performance degradation of thermally stressed IGZO TFTs with SiO2 for both the gate dielectric and back-channel passivation material. The TFT fabrication process included a post-passivation 400 °C O2 anneal to adjust
Publikováno v:
ECS Transactions. 86:153-166
The existence of band-tail states (BTS) in indium-gallium-zinc oxide (IGZO) results in TFTs with electrical characteristics that are not well represented by conventional device models. Common parameters such as threshold voltage and channel mobility
Publikováno v:
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
Flash lamp annealing is explored as a replacement process for crystallization of amorphous silicon and activation of boron introduced subsequently by ion implantation. Single-stage crystallization/activation and two-stage crystallization + activation