Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Karl Cedric Gonzales"'
Autor:
Maria Angela Faustino, Elmer Estacio, Armando Somintac, Gerald Angelo Catindig, Masahiko Tani, Hannah Bardolaza, Jessica Afalla, Elizabeth Ann Prieto, Victor Dc Andres Vistro, Valynn Katrine Mag-usara, Arnel Salvador, Alexander De Los Reyes, Neil Irvin Cabello, John Paul Ferrolino, Karl Cedric Gonzales, Hideaki Kitahara
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports
Scientific Reports
We present the implementation of an efficient terahertz (THz) photoconductive antenna (PCA) emitter design that utilizes high mobility carriers in the two-dimensional electron gas (2DEG) of a modulation-doped heterostructure (MDH). The PCA design is
Autor:
Horace Andrew Husay, Elizabeth Ann Prieto, Aizitiaili Abulikemu, Armando Somintac, Gerald Angelo Catindig, Arnel Salvador, Jessica Afalla, Karl Cedric Gonzales, Masahiko Tani, Muneaki Hase, Elmer Estacio
Publikováno v:
Repositori Universitat Jaume I
Universitat Jaume I
Universitat Jaume I
Epitaxial low temperature grown GaAs (LT-GaAs) on silicon (LT-GaAs/Si) has the potential for terahertz (THz) photoconductive antenna applications. However, crystalline, optical and electrical properties of heteroepitaxial grown LT-GaAs/Si can be very
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07adddb542b864411cac66ef2cab2223
Autor:
Gerald Angelo Catindig, Horace Andrew Husay, Alexander De Los Reyes, Elizabeth Ann Prieto, Maria Angela Faustino, Arnel Salvador, Elmer Estacio, John Daniel Vasquez, Armando Somintac, Mae Agatha Tumanguil-Quitoras, Karl Cedric Gonzales
Publikováno v:
Repositori Universitat Jaume I
Universitat Jaume I
Universitat Jaume I
Terahertz (THz) emission increase is observed for GaAs thin films that exhibit structural defects. The GaAs epilayers are grown by molecular beam epitaxy on exactly oriented Si (100) substrates at three different temperatures (Ts = 320ºC, 520ºC and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2cbda88be8c8a29c802c85eb9ded011c
Autor:
Gerald Angelo Catindig, Arnel Salvador, Armando Somintac, Jessica Afalla, Masahiko Tani, Muneaki Hase, Elizabeth Ann Prieto, Elmer Estacio, Karl Cedric Gonzales, Valynn Katrine Mag-usara
Publikováno v:
2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
Carrier dynamics of two LT-GaAs layers grown using similar parameters, but on different substrates were studied. The behavior of the time-resolved terahertz transmission was observed to differ in trapping time constants, as well as in fluence-depende
Autor:
Elmer Estacio, Karim Omambac, Armando Somintac, J. G. Porquez, Arnel Salvador, Karl Cedric Gonzales, John Daniel Vasquez, Mae Agatha Tumanguil, Elizabeth Ann Prieto, Alexander De Los Reyes, Kohji Yamamoto, Masahiko Tani, Joselito Muldera, Lorenzo Lopez
Publikováno v:
Current Applied Physics. 17:522-526
We investigate the effects of an externally applied magnetic field on the terahertz (THz) emission of Gallium Manganese Arsenide (GaMnAs) films grown via molecular beam epitaxy (MBE). Results show that low Mn-doping in GaMnAs resulted to increased TH
Autor:
Arnel Salvador, Joselito Muldera, Takeshi Moriyasu, Armando Somintac, Masahiko Tani, Dmitry S. Bulgarevich, Jessica Afalla, John Daniel Vasquez, Takashi Furuya, Elmer Estacio, Hideaki Kitahara, Gerald Angelo Catindig, Elizabeth Ann Prieto, Horace Andrew Husay, Karl Cedric Gonzales, Valynn Katrine Mag-usara
Publikováno v:
2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
GaAs films were grown on Si (100) substrates with a “two-step buffer” growth technique using molecular beam epitaxy, wherein a low temperature GaAs buffer is grown at two substrate temperatures prior to the GaAs layer. Results of GaAs layer growt
Autor:
Arnel Salvador, Gerald Angelo Catindig, Elmer Estacio, John Daniel Vasquez, Karl Cedric Gonzales, Ameera Jose, Miguel Bacaoco, Arven Cafe, Armando Somintac, Anthony Montecillo, Alexander De Los Rcyes, Joybelle Lopez, Maria Angela Faustino
Publikováno v:
2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
A semiconductor terahertz (THz) emitter based on an active i-/n-GaAs layer integrated on a porous silicon (PSi) distributed Bragg reflector (PSi-DBR) is presented. It is specifically designed for the use of a very thin GaAs film of thickness less tha
Autor:
Horace Andrew Husay, Elizabeth Ann Prieto, Neil Irvin Cabello, Masahiko Tani, Gerald Angelo Catindig, Hideaki Kitahara, Joselito Muldera, Maria Angela Faustino, Elmer Estacio, Alexander De Los Reyes, Armando Somintac, Victor Dc Andres Vistro, Karl Cedric Gonzales, Jessica Afalla, Valynn Katrine Mag-usara, Hannah Bardolaza, Arnel Salvador, John Paul Ferrolino
Publikováno v:
Journal of Physics D: Applied Physics. 53:095105
Carrier dynamics and photoconductivity in epitaxial-grown low-temperature GaAs on nominal and vicinal Si(1 0 0) substrates ('LT-GaAs/Si') were studied to predict their actual performance as THz photoconductive antenna (PCA) detectors. An optical-pump
Autor:
Gerald Angelo Catindig, Elizabeth Ann Prieto, Horace Andrew Husay, Elmer Estacio, John Daniel Vasquez, Karl Cedric Gonzales, Arnel Salvador, Masahiko Tani, Mae Agatha Tumanguil-Quitoras, Joselito Muldera, Jessica Afalla, Armando Somintac, Hideaki Kitahara
Publikováno v:
Semiconductor Science and Technology. 34:035031
Autor:
Rafael Jaculbia, Elmer Estacio, Arnel Salvador, Karim Omambac, Jessica Afalla, Armando Somintac, Elizabeth Ann Prieto, Karl Cedric Gonzales, Maria Herminia Balgos
Publikováno v:
Journal of Physics and Its Applications. 1:7
This study presents the terahertz (THz) emission of molecular beam epitaxy (MBE)-grown Gallium Arsenide (GaAs) on surface textured p-type Silicon (p- Si) (100) substrates. Surface texturing was achieved by anisotropic wet chemical etching using 5% wt