Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Karine Mourgues"'
Autor:
J. Marcon, Hichame Maanane, Mohamed Masmoudi, Karine Mourgues, Mohamed Ali Belaïd, Philippe Eudeline, M. Gares
Publikováno v:
Microelectronics Reliability. 47:1394-1399
This paper reports comparative reliability of the hot carrier induced electrical performance degradation in power RF LDMOS transistors after RF life-tests and novel methods for accelerated ageing tests under various conditions (electrical and/or ther
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cae746a4f28b08cbd0687f6e74ea045
https://doi.org/10.1016/j.microrel.2007.07.064
https://doi.org/10.1016/j.microrel.2007.07.064
Publikováno v:
Microelectronics Journal. 38:164-170
This paper presents the results of comparative reliability study of two accelerated ageing tests for thermal stress applied to power RF LDMOS: Thermal Shock Tests (TST, air-air test) and Thermal Cycling Tests (TCT, air-air test) under various conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f4a427c9ea3734253c0fee04347ca5f
https://doi.org/10.1016/j.mejo.2006.08.004
https://doi.org/10.1016/j.mejo.2006.08.004
Publikováno v:
Microelectronics Reliability. 47:59-64
This paper presents the results of comparative reliability study of C–V characteristics through three accelerated ageing tests for stress applied to an RF LDMOS: Thermal shock tests (TST, air–air test), thermal cycling tests (TCT, air–air test)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed3d4a8c412f98124e4097430093983f
https://doi.org/10.1016/j.microrel.2006.04.009
https://doi.org/10.1016/j.microrel.2006.04.009
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 253:250-254
This paper presents a synthesis of temperature effects on power RF Laterally Diffused (LD) MOS performances, which can modify and degrade transistor physical and electrical behaviour. In this work, the temperature influence on device electrical chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8efa384170980355b12a973b311a5ef
https://doi.org/10.1016/j.nimb.2006.10.040
https://doi.org/10.1016/j.nimb.2006.10.040
Autor:
Karine Mourgues, J. Marcon, Mohamed Masmoudi, Pierre Bertram, Philippe Eudeline, Mohamed Ali Belaïd, M. Gares, Hichame Maanane, Clément Tolant
Publikováno v:
Microelectronics Reliability. 46:1806-1811
This paper presents an innovative reliability bench specifically dedicated to high RF power device lifetime tests under pulse conditions for radar application. A base-station dedicated LDMOS transistor has been chosen for RF lifetests and a complete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11c6f12ee1122b2cceef95879865c8e1
https://doi.org/10.1016/j.microrel.2006.07.074
https://doi.org/10.1016/j.microrel.2006.07.074
Autor:
Philippe Eudeline, K. Ketata, Mohamed Masmoudi, Karine Mourgues, Mohamed Ali Belaïd, J. Marcon, Clément Tolant, Hichame Maanane
Publikováno v:
Microelectronics Reliability. 46:994-1000
An innovative reliability test bench dedicated to RF power devices is currently implemented. This bench allows to apply both electric and thermal stress for lifetime test under radar pulsed RF conditions. This paper presents the first investigation f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f40a309512d693d4da6148de4296addb
https://doi.org/10.1016/j.microrel.2005.07.107
https://doi.org/10.1016/j.microrel.2005.07.107
Publikováno v:
Microelectronics Reliability. 45:1732-1737
We present in this paper results of comparative reliability study of three accelerated ageing tests applied on power RF LDMOS: Thermal Shock Tests (TST, air-air test), Thermal Cycling Tests (TCT, air-air test) and High Temperature Storage Life (HTSL)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3ca5ca1eb123c6eafa11c3ac7977f9b
https://doi.org/10.1016/j.microrel.2005.07.099
https://doi.org/10.1016/j.microrel.2005.07.099
Autor:
Jean Pierre Sipma, Karine Mourgues, Loïc Lachèze, Philippe Eudeline, Pascal Dherbécourt, Olivier Latry, Viswas Purohit, Hichame Maanane, F. Cornu
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, 2011, 51 (8), pp.1289-1294. ⟨10.1016/j.microrel.2011.03.040⟩
Microelectronics Reliability, Elsevier, 2011, 51 (8), pp.1289-1294. ⟨10.1016/j.microrel.2011.03.040⟩
Microelectronics Reliability, 2011, 51 (8), pp.1289-1294. ⟨10.1016/j.microrel.2011.03.040⟩
Microelectronics Reliability, Elsevier, 2011, 51 (8), pp.1289-1294. ⟨10.1016/j.microrel.2011.03.040⟩
This paper reports a methodology to correlate Hot Carrier Injection (HCI) degradation mechanism and electrical figures of merit on Lateral-Diffused Metal–Oxide-Semiconductor (LDMOS) transistor. This method is based on RF life test in radar operatin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35deedb63d0b7ecfb2c9b8d5d7e4103d
https://hal.science/hal-02267392
https://hal.science/hal-02267392
Autor:
Pascal Dherbécourt, Philippe Eudeline, Olivier Latry, F. Cornu, Hichame Maanane, Jean Pierre Sipma, Mohamed Masmoudi, Karine Mourgues
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2010, 50 (9-11), pp.1574-1576. ⟨10.1016/j.microrel.2010.07.086⟩
Microelectronics Reliability, 2010, 50 (9-11), pp.1574-1576. ⟨10.1016/j.microrel.2010.07.086⟩
Microelectronics Reliability, Elsevier, 2010, 50 (9-11), pp.1574-1576. ⟨10.1016/j.microrel.2010.07.086⟩
Microelectronics Reliability, 2010, 50 (9-11), pp.1574-1576. ⟨10.1016/j.microrel.2010.07.086⟩
A reliability test bench dedicated to RF power devices is used to improve 330 W LDMOS in a radar conditions. The monitoring of RF power, drain, gate voltages and currents under various pulses and temperatures conditions are investigated. Numerous dut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7d47be9a3d15ffd5e95dabdd11cf957
https://hal.archives-ouvertes.fr/hal-02267399
https://hal.archives-ouvertes.fr/hal-02267399
Autor:
J. Marcon, Mohamed Masmoudi, Karine Mourgues, Philippe Eudeline, Mouna Chetibi-Riah, Hichame Maanane, Mohamed Ketata
Publikováno v:
Micro Electronic and Mechanical Systems
It is well recognized that excellent power performance and linearity can be achieved at low cost using Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) field effect transistor. In fact, it is the preferred technology for base station applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cffa3a7947ca6641fd3c938d33103e27
https://doi.org/10.5772/7015
https://doi.org/10.5772/7015