Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Karine Florent"'
Autor:
Umberto Celano, Andres Gomez, Paola Piedimonte, Sabine Neumayer, Liam Collins, Mihaela Popovici, Karine Florent, Sean R. C. McMitchell, Paola Favia, Chris Drijbooms, Hugo Bender, Kristof Paredis, Luca Di Piazza, Stephen Jesse, Jan Van Houdt, Paul van der Heide
Publikováno v:
Nanomaterials, Vol 10, Iss 8, p 1576 (2020)
The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes o
Externí odkaz:
https://doaj.org/article/ad7caa6c7cc54dbabdff908aa25de20f
Autor:
Liam Collins, Stephen Jesse, Umberto Celano, S. R. C. McMitchell, Paola Piedimonte, Chris Drijbooms, Kristof Paredis, Paul van der Heide, Hugo Bender, Luca Di Piazza, Sabine M. Neumayer, Mihaela Popovici, Jan Van Houdt, Paola Favia, Karine Florent, Andrés Gómez
Publikováno v:
Nanomaterials
BASE-Bielefeld Academic Search Engine
Nanomaterials, Vol 10, Iss 1576, p 1576 (2020)
Volume 10
Issue 8
Digital.CSIC. Repositorio Institucional del CSIC
instname
BASE-Bielefeld Academic Search Engine
Nanomaterials, Vol 10, Iss 1576, p 1576 (2020)
Volume 10
Issue 8
Digital.CSIC. Repositorio Institucional del CSIC
instname
The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a782ad15567e1ee8fa36babaa5bed592
https://pubmed.ncbi.nlm.nih.gov/32796703
https://pubmed.ncbi.nlm.nih.gov/32796703
Autor:
Santosh K. Kurinec, Paul Stradins, Sumit Agarwal, William Nemeth, Karine Florent, Craig L. Perkins, Abhijit S. Kale, Alexander Marshall, David L. Young
Publikováno v:
ACS Applied Energy Materials. 1:2841-2848
Copper is a low-cost, low-damage alternative to Ag paste for front-side metallization of crystalline Si (c-Si) solar cells, but requires conductive diffusion barriers like Ni or NiSi. Thermal stabi...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a811e8ae77c05a865f5f65a0ea81d853
https://doi.org/10.1021/acsaem.8b00488
https://doi.org/10.1021/acsaem.8b00488
Autor:
Guido Groeseneken, Mihaela Popovici, Luca Di Piazza, Simone Lavizzari, Jingyu Duan, Karine Florent, Jan Van Houdt
Publikováno v:
IEEE Transactions on Electron Devices. 64:4091-4098
Ferroelectric (FE) hafnium oxide is a promising candidate for memory applications. In this paper, endurance, imprint, and retention tests are carried out on FE aluminum-doped hafnium oxide thin films with different electrodes: 1) metal–insulator–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69f0057c5489f8f2993eb3d347f2ef4a
https://doi.org/10.1109/ted.2017.2742549
https://doi.org/10.1109/ted.2017.2742549
Autor:
Sergiu Clima, M. Suzuki, Yusuke Higashi, A. Subirats, L. Di Piazza, K. Banerjee, Karine Florent, S. R. C. McMitchell, B. Kaczer, D. Linten, Umberto Celano, Nicolo Ronchi, J. Van Houdt
Publikováno v:
IRPS
The mechanism of imprint in FE-HfO 2 is investigated in detail. It is clearly shown that the imprint can be recovered by additional pulses and domain switching is indispensable for the recovery. The results from sub-loop measurement suggest that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4ae79b8262bdeb39a00666b9149811c
https://doi.org/10.1109/irps.2019.8720553
https://doi.org/10.1109/irps.2019.8720553
Autor:
Mihaela Popovici, Simone Lavizzari, J. Van Houdt, Milan Pešić, Goedele Potoms, Guido Groeseneken, A. Subirats, K. Banerjee, Antonio Arreghini, L. Di Piazza, Farid Sebaai, S. R. C. McMitchell, Karine Florent
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
A vertical ferroelectric HfO 2 field effect transistor based on 3-D macaroni NAND architecture is reported for the first time. Up to 2 V memory window was obtained after the application of 100 ns program/erase pulses. Flash-like endurance of 104 cycl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::455e8b9fa844fd83b67780217f47f967
https://doi.org/10.1109/iedm.2018.8614710
https://doi.org/10.1109/iedm.2018.8614710
Autor:
L. Di Piazza, Mihaela Popovici, Nicolo Ronchi, Karine Florent, Sergiu Clima, Geoffrey Pourtois, Laura Nyns, J. Van Houdt, S. R. C. McMitchell
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
We investigate at the atomic level the most probable phase transformations under strain, that are responsible for the ferroelectric/antiferroelectric behavior in Hf 1-x Zr x O 2 materials. Four different crystalline phase transformations exhibit a po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b21eea5dd4f0bc34bf2e3d5d657369ce
https://doi.org/10.1109/iedm.2018.8614552
https://doi.org/10.1109/iedm.2018.8614552
Publikováno v:
Materials Letters. 161:96-99
Transition metal dichalcogenide MoS 2 has attracted significant interest for its unique electronic, optical and catalytic properties. Layered crystalline MoS 2 can be mechanically exfoliated into single monolayers. With the advancement of microscopic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ef191ef368ff15055ce1dd20fbd2d2e
https://doi.org/10.1016/j.matlet.2015.08.083
https://doi.org/10.1016/j.matlet.2015.08.083
Autor:
Simone Lavizzari, Kris Paulussen, Hugo Bender, Mihaela Popovici, Jan Van Houdt, Luca Di Piazza, Wilfried Vandervorst, Karine Florent, Umberto Celano, Paola Favia
Publikováno v:
Nanoscale. 10(18)
After the successful introduction as a replacement for the SiO2 gate dielectric in metal–oxide–semiconductor field-effect transistors, HfO2 is currently one of the most studied binary oxide systems with ubiquitous applications in nanoelectronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b13c6f9608eb274319712d11ac5dfc09
https://pubmed.ncbi.nlm.nih.gov/29691544
https://pubmed.ncbi.nlm.nih.gov/29691544
Autor:
Ben Kaczer, Karine Florent, Mihaela Ioana Popovici, Umberto Celano, Guido Groeseneken, Robin Degraeve, S. Lavizzari, L. Di Piazza, J. Van Houdt, A. Subirats
Publikováno v:
IRPS
Ferroelectric HfO 2 devices are potential candidates for non-volatile memory applications. However, they often exhibit a pinched hysteresis, which requires the application of cycles to “wake-up” the device. In this paper, endurance of FE-Al: HfO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e3a22bf09639dbb7e8fa59e77f20651
https://doi.org/10.1109/irps.2018.8353634
https://doi.org/10.1109/irps.2018.8353634