Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Karim Yckache"'
Autor:
Laurent Veyre, Christophe Copéret, Marianne Danielou, Virginie Enyedi, Jean-Paul Barnes, Maxence Valla, Laurent Mathey, Hervé Fontaine, Corentin Durand, Denis Mariolle, Thibault Alphazan, Jolien Dendooven, Chloé Thieuleux, Marc Veillerot, François Martin, Bruno Grandidier, Sebastien Kerdiles, Karim Yckache, Maxime Berthe, Jean Guerrero, François Bertin, Nicolas Chevalier
Publikováno v:
Journal of Physical Chemistry C
Journal of Physical Chemistry C, 2015, 119 (24), pp.13750-13757. ⟨10.1021/acs.jpcc.5b03408⟩
Journal of Physical Chemistry C, American Chemical Society, 2015, 119 (24), pp.13750-13757. ⟨10.1021/acs.jpcc.5b03408⟩
Journal of Physical Chemistry C, 2015, 119 (24), pp.13750-13757. ⟨10.1021/acs.jpcc.5b03408⟩
Journal of Physical Chemistry C, American Chemical Society, 2015, 119 (24), pp.13750-13757. ⟨10.1021/acs.jpcc.5b03408⟩
Designing new approaches to incorporate dopant impurities in semiconductor materials is essential in keeping pace with electronics miniaturization without device performance degradation. On the basis of a mild solution-phase synthetic approach to fun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4959ebf92e1cca5314b44ffe8a77db1c
https://hal.science/hal-02084783
https://hal.science/hal-02084783
Autor:
Julian Duchaine, Yohann Spiegel, Frederic Milesi, Susan Felch, Alain Claverie, Frank Torregrosa, Frederic Gonzatti, H. Etienne, Karim Yckache
Publikováno v:
11th International Workshop on Junction Technology (IWJT).
For continued scaling of future CMOS devices (sub-32 nm), heavily-doped ultra-shallow junctions are required. Plasma doping (PD) with PULSION® offers the attractive capability of high dose and low energy doping with short production times [1, 2]. Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3cfb19911b60f9df472fbbce485e550
https://doi.org/10.1109/iwjt.2011.5970001
https://doi.org/10.1109/iwjt.2011.5970001
Autor:
Frederic Gonzatti, Frederic Milési, Vincent Delaye, Julian Duchaine, Frank Torregrosa, Hasnaa Etienne, Karim Yckache, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki
Publikováno v:
AIP Conference Proceedings.
To face the continuous dimensions downscaling for upcoming semiconductor devices, we have investigated a plasma immersion ion implantation way and have compared the results to a conventional one. This new implantation method allows, in particular, hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::230f733aa0cb8faa4925b9d979825de6
https://doi.org/10.1063/1.3548380
https://doi.org/10.1063/1.3548380
Autor:
Marc Gely, Marc Bocquet, Helen Grampeix, Eric Jalaguier, Corrado Bongiorno, G. Auvert, Salvatore Lombardo, Barbara De Slavo, Karim Yckache, P. Brianceau, A.M. Papon, Jean Philippe Colonna, Gabriel Molas
Publikováno v:
MRS Proceedings. 1071
We present the realization of hybrid silicon core/silicon nitride shell nanodots by Low Pressure Chemical Vapor Deposition (LPCVD) and their application as floating gate in Non Volatile Memory (NVM) devices. The LPCVD process includes three steps: nu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::601146aab723058c5e98606d526b0ae8
https://doi.org/10.1557/proc-1071-f02-02
https://doi.org/10.1557/proc-1071-f02-02
Autor:
Laurent Mathey, Laurent Veyre, Hervé Fontaine, Virginie Enyedi, Karim Yckache, Jean Guerrero, François Martin, Jean-Paul Barnes, François Bertin, Chloé Thieuleux, Christophe Copéret
Publikováno v:
ECS Meeting Abstracts. :267-267
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4579642cd4f9e27b42841e90127aec5c
https://doi.org/10.1149/ma2012-02/3/267
https://doi.org/10.1149/ma2012-02/3/267
Publikováno v:
ECS Meeting Abstracts. :2431-2431
Deals with the low temperature and high temperature boron and phosphorous doping of Si for raised sources and drains and MEMS purposes. Hydrogenated (NSEG) and chlorinated (SEG) chemistries have been probed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a69d4994f3b21882266907c97fa3deb5
https://doi.org/10.1149/ma2008-02/37/2431
https://doi.org/10.1149/ma2008-02/37/2431