Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Karim Benmassai"'
Autor:
Djamila Doumaz, Abdelhak Feraht Hemida, Karim Benmassai, Hakim Tahi, Mohamed Goudjil, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Mohamed Boubaaya
Publikováno v:
IDT
Negative and positive bias temperature instability (NBTI and PBTI) are described in the same model using the Reaction-Diffusion (RD) by taking into account all protagonist diffusion hydrogenate species; hydrogen atom (H), proton (H+) and hydrogen mol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7639fb0359690aae577f5adec293a11
https://doi.org/10.1109/idt.2014.7038619
https://doi.org/10.1109/idt.2014.7038619
Autor:
Mohamed Boubaaya, Amel Chenouf, Hakim Tahi, Karim Benmassai, Abdelmadjid Benabdelmoumene, Mohamed Goudjil, Boualem Djezzar
Publikováno v:
IDT
The identification of the microstructure defects responsible of metal-oxide-silicon field effect transistor (MOSFET) reliability problems is important to understand, the physical mechanisms behind these problems. In this paper, the effective dipole m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6514815fd52f4bb73fdf96bbdb72d05
https://doi.org/10.1109/idt.2014.7038620
https://doi.org/10.1109/idt.2014.7038620