Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Kari Schjølberg-Henriksen"'
Autor:
Subramanian S. Iyer, Pranav Ambhore, Karthick Mani, Brett Beekley, Mark S. Goorsky, Nishant Malik, Kari Schjølberg-Henriksen
Publikováno v:
ECS Transactions
Thermocompression bonding is especially important for low pitch ( This study investigated roles of temperature and pressure separately in diffusion and surface topology changes under conditions that were comparable to those used during thermocompress
Autor:
Hoang-Vu Nguyen, Daniel Nilsen Wright, Maaike M. Visser Taklo, Branson D. Belle, Helge Kristiansen, Jakob Gakkestad, Kari Schjølberg-Henriksen
Publikováno v:
International Symposium on Microelectronics. 2016:000044-000049
An anisotropic conductive film (ACF) can be utilized to simultaneously form mechanical bonds and electrical connections during flip-chip assembly. The electrical connection is created by trapping randomly dispersed metallized polymer spheres (MPS) in
Autor:
Kurt Hingerl, Nishant Malik, Kari Schjølberg-Henriksen, Viorel Dragoi, Bernhard Rebhan, Andreas Hinterreiter
Publikováno v:
ECS Transactions
Thermo-compression wafer bonding is a key technology for the wafer-level production of hermetically sealed cavities, which are essential for the functioning of many microelectromechanical systems (MEMS). Aluminum, with its low material price, high th
Thermo-mechanical stability of metal structures is one of the key factors affecting accuracy of micro-electromechanical (MEMS) piezoresistive pressure sensors. In this work, we present the measurement results of stress and hysteresis for the followin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e21b8c6f595d96f031a90cf308ec3f2c
https://hdl.handle.net/11250/2581675
https://hdl.handle.net/11250/2581675
Autor:
Subramanian S. Iyer, Niteesh Marathe, Karthick Mani, Brett Beekley, Mark S. Goorsky, Adeel Bajwa, Kari Schjølberg-Henriksen
Publikováno v:
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
Au-Au based interconnect bonding (and Cu-Cu bonding) is advanced by addressing the roles of initial surface roughness, chemical mechanical polishing, bonding pressure and temperature. Focused ion beam sectioning through the bonded interface is used t
Autor:
S. Hadzialic, Jo Gjessing, Dag Thorstein Wang, Kari Anne Hestnes Bakke, Kari Schjølberg-Henriksen
Publikováno v:
Silicon Photonics XII.
Infrared (IR) thermal emitters are widely used in monitoring applications. For autonomous systems, miniaturized devices with low power consumption are needed. We have designed, fabricated and tested a novel device design, packaged on the wafer level
Autor:
Nishant Malik, Maaike M. Visser Taklo, Terje G. Finstad, Wilhelm Dall, Kari Schjølberg-Henriksen, Vishnukanthan Venkatachalapathy, Erik Poppe
Publikováno v:
Superlattices and Microstructures
Properties of aluminum thin films for thermocompression bonding have been studied in terms of surface roughness, grain size, and grain orientation by AFM, SEM, XRD and EBSD for thermocompression bonding. Al films were sputter deposited directly on Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1584d2b54b417b802e800a7397321ed
https://hdl.handle.net/11250/2469521
https://hdl.handle.net/11250/2469521
Autor:
Terje G. Finstad, Nisant Malik, Maaike M. Visser Taklo, Erik Poppe, Kari Schjølberg-Henriksen
Publikováno v:
ECS Transactions. 64:149-160
Thermocompression bonding using deposited metal films as bonding material is a promising method for realizing a conductive and hermetic seal for device encapsulation [1]. Al is of high interest as bonding material due to its CMOS process compatibilit
Publikováno v:
ECS Transactions. 64:305-314
Low, controlled, and stable gas pressures in sealed cavities are key features of wafer-level bonding processes used for hermetic sealing. The gas pressure is determined by e.g. the permeability of the seal and capping materials, gas produced during t
Publikováno v:
Handbook of Wafer Bonding. :63-80