Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Kari Groves"'
Autor:
Sanjay Raman, Jay Rockway, Kari Groves, Len Orlando, G.L. Creech, Aji Mattamana, Tony Quach, Christopher Maxey
Publikováno v:
IEEE Design & Test of Computers. 29:27-39
This article discusses the goals and recent achievements of the HEALICs program. The program's aim is to enhance wireless systems with sensors, actuators, and mixed-signal control loops in order to improve their performance yield.
Autor:
Tony Quach, L. Johnson, Peter W. Wyatt, Craig L. Keast, P. Watson, P. Orlando, Kari Groves, Vipul J. Patel, R. Drangmeister, Chenson Chen, Aji Mattamana, C.L. Chen
Publikováno v:
2012 IEEE International SOI Conference (SOI).
This paper reports on the successful demonstration of radio frequency (RF) components in support of an integrated wide band/high dynamic range X-band receiver in 180-nm fully-depleted (FD) SOI CMOS technology. The demonstrated microwave monolithic in
Autor:
L. Johnson, P. Orlando, C.L. Chen, P. Watson, Chenson Chen, Peter W. Wyatt, Aji Mattamana, Kari Groves, R. Drangmeister, Tony Quach, Craig L. Keast
Publikováno v:
ICUWB
This paper describes a wide band/high dynamic range receiver implemented in a 0.18-μm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The system demonstration is a single conversion architecture with RF input at X-Band and IF output at
Autor:
Matthew B. Longbrake, R. Drangmeister, Aji Mattamana, G.L. Creech, P. Orlando, Jonathan Buck, Thomas Dalrymple, Robert Neidhard, J. McCann, Tony Quach, Peter E. Buxa, Lenny Johnson, Kari Groves
Publikováno v:
2010 IEEE International Symposium on Phased Array Systems and Technology.
This paper describes the demonstration of a four-channel digital beamforming system incorporating highly integrated silicon germanium downconverter modules. The downconverter modules are designed to translate X-band frequencies (9 to 10.5 GHz) down t
Autor:
R.K. Bonebright, R. Drangmeister, Aji Mattamana, L.M. Johnson, T.L. James, G.L. Creech, Tony Quach, C.A. Bryant, Vipul J. Patel, Kari Groves, P. Orlando, B.K. Kormanyos
Publikováno v:
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
This paper reports a demonstration of X-band receiver RF front-end components and the integrated chipset implemented in 0.18 mum silicon germanium (SiGe) technology. The system architecture consists of a single down conversion from X-band at the inpu
Autor:
Marian Kazimierczuk, P. Orlando, Robert C. Fitch, Kari Groves, Tony Quach, Aji Mattamana, J. K. Gillespie
Publikováno v:
ECS Meeting Abstracts. :1760-1760
Integration of active and passive microwave circuit components onto an inexpensive silicon substrate can be accomplished using photosensitive SU-8 epoxy as the interposer layer. This paper addresses the 3-dimensional integration of AlGaN/GaN high ele
Autor:
Maxey, Christopher, Raman, Sanjay
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits & Technology Meeting (BCTM); 2014, p195-198, 4p
Autor:
Maxey, Christopher, Raman, Sanjay
Publikováno v:
2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems; 2014, p110-112, 3p