Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Karen Renaldo"'
Autor:
Eric J. Stewart, Josephine B. Chang, Ken Nagamatsu, Kevin Frey, Jeffrey Hartman, Georges Siddiqi, Brian Novak, Karen Renaldo, Annaliese Drechsler, Robert S. Howell, Patrick B. Shea, Shamima Afroz, Sam Wanis, Ron Freitag, Shalini Gupta, Dale Dawson, Monique J. Farrell
Publikováno v:
BCICTS
This report describes the second generation (Gen2) of the Superlattice Castellated Field Effect Transistor (SLCFET) amplifier. The SLCFET amplifier is a new device that uses 3-dimensional device geometry to modulate a superlattice of multiple AlGaN/G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf8c5cccf3fb1677525954ad1c6edead
https://doi.org/10.1109/bcicts45179.2019.8972728
https://doi.org/10.1109/bcicts45179.2019.8972728
Autor:
Robert S. Howell, Karen Renaldo, Shalini Gupta, Justin Parke, Bettina Nechay, Ishan Wathuthanthri, Pavel Borodulin, Megan Snook, Ron Freitag, H. George Henry, Matt King, Eric J. Stewart, Matt Torpey
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
FET-based switched filters do not occupy a large space in the literature due to the high loss of the switches relative to other technologies. The Super-Lattice Castellated Field Effect Transistor (SLCFET) is a low loss, high isolation, broadband RF s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77bfd81eee8af8c1759459197cdf412f
https://doi.org/10.1109/csics.2016.7751044
https://doi.org/10.1109/csics.2016.7751044
Autor:
Matthew R. King, Robert S. Howell, Eric J. Stewart, Karen Renaldo, Jeff Hartman, Bettina Nechay, Justin Parke, Shalini Gupta, Ishan Wathuthanthri, Harlan Carl Cramer, Megan Snook, H. George Henry, Pavel Borodulin, Ron Freitag
Publikováno v:
2015 73rd Annual Device Research Conference (DRC).
High performance RF switch components are vital for the successful implementation of a variety of system architectures, ranging from phased array radars and multi-function sensors to the wireless components of mobile phones and consumer electronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9b629bab1a727d6a61d5e7298d07229
https://doi.org/10.1109/drc.2015.7175554
https://doi.org/10.1109/drc.2015.7175554
Autor:
Parrish Ralston, Karen Renaldo, Shalini Gupta, Ron Freitag, Eric J. Stewart, H. George Henry, Justin Parke, Bettina Nechay, Matthew R. King, R. Chris Clarke, Harlan Carl Cramer, Ishan Wathuthanthri, Megan Snook, Robert S. Howell, Jeffrey Hartman
Publikováno v:
2014 IEEE International Electron Devices Meeting.
NGES reports the development of a novel transistor structure based on a GaN super-lattice channel with a 3D gate, named the SLCFET (Super-Lattice Castellated Field Effect Transistor). Transistor measurements provided median values of I MAX >2.7 A/mm,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3cc0644b5e78f273f59abdc631e6b85
https://doi.org/10.1109/iedm.2014.7047033
https://doi.org/10.1109/iedm.2014.7047033
Autor:
Jeff Hartman, Bettina Nechay, Justin Parke, Karen Renaldo, Harlan Carl Cramer, Eric J. Stewart, Robert S. Howell, Parrish Ralston, Megan Snook, Shalini Gupta, Matthew R. King, Ishan Wathuthanthri, H. George Henry, Pavel Borodulin, Ron Freitag
Publikováno v:
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
A low loss, high isolation, broadband RF switch has been developed using a novel type of field effect transistor structure that exploits the use of a super-lattice structure in combination with a three dimensional, castellated gate to achieve excelle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4042329cdf89fe2a7fca99d22d7df114
https://doi.org/10.1109/csics.2014.6978566
https://doi.org/10.1109/csics.2014.6978566
Publikováno v:
2011 IEEE MTT-S International Microwave Symposium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::304eafff7c32c5488086bf9aef52e67c
https://doi.org/10.1109/mwsym.2011.5972706
https://doi.org/10.1109/mwsym.2011.5972706
Publikováno v:
1999 IEEE MTT-S International Topical Symposium on Technologies for Wireless Applications (Cat. No. 99TH8390).
A family of five PHEMT 0.4-0.5 W driver chips and four 1-1.5 W power amplifier chips spanning 28-40 GHz has been developed. A robust 0.25 /spl mu/m T-gate technology enables the constituent 500 /spl mu/m PHEMT cells to consistently achieve yields >70
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af25e6bfcb6fd34920923c885c27497a
https://doi.org/10.1109/mtttwa.1999.755169
https://doi.org/10.1109/mtttwa.1999.755169