Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Karen L. Turnquest"'
Autor:
Georgia K. Rich, Jeff Meute, Shashikant Patel, Victoria L. Graffenberg, Karen L. Turnquest, Michael P. Rodriguez, Kim Dean
Publikováno v:
SPIE Proceedings.
International SEMATECH(ISMT) has operated a 157nm Resist Test center since June of 2000. During this time, we have processed hundreds of 157nm photoresist samples from major resist suppliers and research organizations. Almost all of these of these ea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72e2663dc5240089ec6adeee3476aaec
https://doi.org/10.1117/12.537652
https://doi.org/10.1117/12.537652
Autor:
Nigel Cave, Carla M. Nelson-Thomas, John L. Sturtevant, Nancy Benavides, John R. Alvis, Douglas J. Bonser, Kyle Patterson, Karen L. Turnquest, William D. Taylor
Publikováno v:
SPIE Proceedings.
Photoresist line edge roughness (LER) has long been feared as a potential limitation to the application of various patterning technologies to actual devices. While this concern seems reasonable, experimental verification has proved elusive and thus L
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15bdd1a04407b4462960dfcb6e4ad13f
https://doi.org/10.1117/12.436808
https://doi.org/10.1117/12.436808
Publikováno v:
SPIE Proceedings.
With the growing complexity of I-line and DUV photolithography processes, defect monitoring and yield improvement is becoming more critical and challenging. In addition to product wafer scans, reliable unpatterned wafer scans, with their advantage of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e57613fbc71fd1a4ea51dd3cfaacaca3
https://doi.org/10.1117/12.350841
https://doi.org/10.1117/12.350841
Autor:
Stuart E. Brown, Karen L. Turnquest, Doug Downey, Richard D. Edwards, Mark W. Michael, Paul W. Ackmann, John L. Nistler
Publikováno v:
SPIE Proceedings.
As the device performance requirements tighten to improve speed distributions, the speed binning caused by across the wafer critical dimension (CD) variation will have significant impact on manufacturing performance yields. Overall speed performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83a757b1f05ae74277f4969636a2979a
https://doi.org/10.1117/12.275998
https://doi.org/10.1117/12.275998