Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Karen Geens"'
Autor:
Walter Gonçalez Filho, Matteo Borga, Karen Geens, Deepthi Cingu, Urmimala Chatterjee, Sourish Banerjee, Anurag Vohra, Han Han, Albert Minj, Herwig Hahn, Matthias Marx, Dirk Fahle, Benoit Bakeroot, Stefaan Decoutere
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-12 (2023)
Abstract This work reports the epitaxial growth of 8.5 µm-thick GaN layers on 200 mm engineered substrates with a polycrystalline AlN core (QST by QROMIS) for CMOS compatible processing of vertical GaN power devices. The epitaxial stack contains a 5
Externí odkaz:
https://doaj.org/article/5ea9232b349f46428755a2c055e14194
Autor:
Kalparupa Mukherjee, Carlo De Santi, Matteo Buffolo, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Andrea Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publikováno v:
Micromachines, Vol 12, Iss 4, p 445 (2021)
This work investigates p+n−n GaN-on-Si vertical structures, through dedicated measurements and TCAD simulations, with the ultimate goal of identifying possible strategies for leakage and breakdown optimization. First, the dominant leakage processes
Externí odkaz:
https://doaj.org/article/750e956e6aa847fd82068bdb34450216
Autor:
Albert Minj, Karen Geens, Hu Liang, Han Han, Céline Noël, Benoit Bakeroot, Kristof Paredis, Ming Zhao, Thomas Hantschel, Stefaan Decoutere
Publikováno v:
Physical Review Applied. 19
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4de47323292a898a1eca10264eba254d
https://doi.org/10.1103/physrevapplied.19.034081
https://doi.org/10.1103/physrevapplied.19.034081
Autor:
Olga Syshchyk, Thibault Cosnier, Zheng-Hong Huang, Deepthi Cingu, Dirk Wellekens, Anurag Vohra, Karen Geens, Pavan Vudumula, Urmimala Chatterjee, Stefaan Decoutere, Tian-Li Wu, Benoit Bakeroot
Publikováno v:
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8571f244a7df5061d93cad7ecf138acd
https://doi.org/10.1109/essderc55479.2022.9947150
https://doi.org/10.1109/essderc55479.2022.9947150
Autor:
Ming Zhao, Stefaan Decoutere, Dirk Fahle, Xiangdong Li, Vladimir Odnoblyudov, Shuzhen You, Guido Groeseneken, Weiming Guo, Karen Geens
Publikováno v:
IEEE Electron Device Letters. 40:1499-1502
Co-integration of the key power stage, namely gate drivers and half-bridge in a single-die solution, is a tremendous and inevitable challenge to realizing GaN power integrated circuits (GaN power ICs). In this letter, a monolithically integrated GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ad27ea1e7a485bdc1a58903d90e5d63
https://doi.org/10.1109/led.2019.2929417
https://doi.org/10.1109/led.2019.2929417
Autor:
Shuzhen You, Karen Geens, Ming Zhao, Vesa-Pekka Lempinen, Xiangdong Li, Benoit Bakeroot, Weiming Guo, Guido Groeseneken, Stefaan Decoutere, Steve Stoffels, Jaakko Sormunen
Publikováno v:
IEEE Transactions on Electron Devices. 66:553-560
A comprehensive study on buffer vertical leakage mechanism and buffer reliability of 200-mm GaN-on-SOI is conducted in this paper. The buffer vertical leakage current versus bias is found to sequentially comprise three ranges of low-field leakage, va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2b6dd6ed04cf110cb42dc0bb24c36e9
https://doi.org/10.1109/ted.2018.2878457
https://doi.org/10.1109/ted.2018.2878457
Autor:
Anurag Vohra, Karen Geens, Ming Zhao, Olga Syshchyk, Herwig Hahn, Dirk Fahle, Benoit Bakeroot, Dirk Wellekens, Benjamin Vanhove, Robert Langer, Stefaan Decoutere
Publikováno v:
Applied Physics Letters. 120:261902
In this work, we demonstrate the epitaxial growth of a gallium-nitride (GaN) buffer structure qualified for 1200 V applications on 200 mm engineered poly-AlN substrates with hard breakdown >1200 V. The manufacturability of a 1200 V qualified buffer s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3255bd148726e4f08d1a35b256a203ff
https://doi.org/10.1063/5.0097797
https://doi.org/10.1063/5.0097797
Autor:
Guido Groeseneken, Karen Geens, Hu Liang, Ming Zhao, Shuzhen You, Xiangdong Li, Stefaan Decoutere, Niels Posthuma
ispartof: SEMICONDUCTOR SCIENCE AND TECHNOLOGY vol:36 issue:3 status: published
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b1ffde052e6b29cdd9aaf9cb706193f
https://lirias.kuleuven.be/handle/123456789/683493
https://lirias.kuleuven.be/handle/123456789/683493
Autor:
Guido Groeseneken, Benoit Bakeroot, Shuzhen You, Nooshin Amirifar, Ming Zhao, Kristof J. P. Jacobs, Deepthi Cingu, Stefaan Decoutere, Xiangdong Li, Karen Geens
Synchronous buck converter comprises a low side (LS) and a high side (HS) switch, where the HS switch works in the first quadrant (forward conduction) whereas the LS switch works in the third quadrant (reverse conduction). However, the reliability of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3635f9fce6a6e8c01ced1ef66dbe5080
https://lirias.kuleuven.be/handle/123456789/683497
https://lirias.kuleuven.be/handle/123456789/683497
Autor:
Carlo De Santi, B. Jonas Ohlsson, Dirk Fahle, Herwig Hahn, Kalparupa Mukherjee, Martin Berg, Matteo Borga, Michael Heuken, Karen Geens, Peter Ramvall, Stefaan Decoutere, Shuzhen You, Matteo Meneghini, Mikael T. Björk, Enrico Zanoni, Hu Liang, Ashutosh Kumar
Publikováno v:
Microelectronics Reliability
This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of using 200 mm d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e32a9fc8bb80660196396aa65efdfa87