Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Karen D. Badger"'
Publikováno v:
Photomask Technology 2019.
Silicon Photonics design layouts require use of curved shapes, since many of the structures built to route light through silicon are designed to curve smoothly to minimize the loss of signal strength. The design-to-silicon flow involves steps like De
Autor:
Yutaka Kodera, Karen D. Badger, Takeshi Isogawa, Jed H. Rankin, Shinji Akima, Masayuki Kagawa, Anka Birnstein, Jan Heumann, Yusuke Toda, Yoshida Itaru, Masashi Yonetani
Publikováno v:
Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology.
Based on the record for reasonable throughput, 19x nm wavelength inspection is one of the strongest candidates available today for the initial EUV (Extreme Ultraviolet) mask inspection approach until high-throughput E-Beam or actinic inspection is re
Autor:
Toshio Konishi, Karen D. Badger, Takeshi Isogawa, Kazunori Seki, Jan Heumann, Masashi Yonetani, Anka Birnstein, Yutaka Kodera
Publikováno v:
Photomask Technology 2018.
EUV (Extreme Ultraviolet) lithography is one of the most promising techniques for imaging 5-nm node and beyond wafer features. Mask defects that matter are the ones that print during exposure at 13.5 nm wavelength. To support EUV development and prod
Autor:
Takeshi Isogawa, Jan Heumann, Masayuki Kagawa, Yusuke Toda, Masashi Yonetani, Karen D. Badger
Publikováno v:
Photomask Technology 2018.
EUV (Extreme Ultraviolet) lithography is one of the key enabling techniques for imaging 7-nm node and beyond wafer technologies. To ensure mask quality levels will support High Volume Manufacturing (HVM), all “defects that matter”, must be identi
Autor:
Kazunori Seki, Takeshi Isogawa, Masashi Yonetani, Jan Heumann, Karen D. Badger, Yutaka Kodera, Toshio Konishi, Anka Birnstein
Publikováno v:
Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology.
19x nm defect inspection is the strongest candidate for initial EUV production until high-throughput E-Beam or Actinic inspection is ready. However, EUV mask inspection on an optical, 19x nm wavelength tool has some difficulties compared to optical m
Publikováno v:
SPIE Proceedings.
Two different mask inspection techniques are developed and compared for 14 nm node and beyond photomasks, High resolution and Litho-based inspection. High resolution inspection is the general inspection method in which a 19x nm wavelength laser is us
Take a byte out of MEEF: VAMPIRE: Vehicle for Advanced Mask Pattern Inspection Readiness Evaluations
Autor:
Karen D. Badger, Kazunori Seki, Jed H. Rankin, Daniel J. Dechene, Hesham Abdelghany, Christina Turley
Publikováno v:
SPIE Proceedings.
MEEF, or Mask Error Enhancement Factor, is simply defined as the ratio of the change in printed wafer feature width to the change in mask feature width scaled to wafer level. It is important in chip manufacturing that leads to the amplification of ma
Autor:
Richard Wistrom, Masayuki Kagawa, Kazuhiro Nishikawa, Yoshifumi Sakamoto, Takeshi Isogawa, Yusuke Toda, Mark Lawliss, Kazunori Seki, Yukio Inazuki, Lin Hu, Ramya Viswanathan, Thomas Faure, Yongan Xu, Amy E. Zweber, Karen D. Badger, Granger Lobb
Publikováno v:
SPIE Proceedings.
In this paper we will describe the development of a new 12% high transmission phase shift mask technology for use with the 10 nm logic node. The primary motivation for this work was to improve the lithographic process window for 10 nm node via hole p
Autor:
Jack Jau, Daniel Corliss, Hung-Yu Tien, Karen D. Badger, Luciana Meli, Jed H. Rankin, Ravi K. Bonam, Fei Wang, Chris Lei, Christina Turley, Wei Fang, Scott Halle, Xiaoxia Huang, Zhenqing John Qi, Acer Chou, Ivy Wu, Chiyan Kuan
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
Over the past few years numerous advancements in EUV Lithography have proven its feasibility of insertion into High Volume Manufacturing (HVM).1, 2 A lot of progress is made in the area of pellicle development but a commercially solution with related
Autor:
Jed H. Rankin, Christina Turley, Scott Halle, Zhengqing John Qi, Eisuke Narita, Ravi K. Bonam, Mark Lawliss, Kazunori Seki, Karen D. Badger
Publikováno v:
SPIE Proceedings.
As Extreme Ultraviolet (EUV) lithography has matured, numerous imposing technical challenges have been the focus of intense scrutiny, including the EUV radiation source, reflective optics, and fundamental mask fabrication. There has been a lurking qu