Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Karel Vanheusden"'
Autor:
Mark A. Rodriguez, Karel Vanheusden, David R. Tallant, Bernadette A. Hernandez, Timothy J. Boyle
Publikováno v:
Journal of the American Ceramic Society. 82:2101-2105
A novel Sr-Ta-O perovskite phase has been synthesized by a chemical preparation route and crystallized on Pt-coated SiO{sub 2}/Si substrates at {minus} 800 C. The phase was isolated as a thin film only (not as a polycrystalline powder) and is likely
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28c00f8ee731d226d7f5a66154e21b9f
https://doi.org/10.1111/j.1151-2916.1999.tb02047.x
https://doi.org/10.1111/j.1151-2916.1999.tb02047.x
Autor:
W.M. Shedd, Shashi P. Karna, Daniel M. Fleetwood, Karel Vanheusden, H.A. Kurtz, R.D. Pugh, Prakashan P. Korambath
Publikováno v:
IEEE Transactions on Nuclear Science. 46:1562-1567
The buildup of positive charge during annealing in forming gas at 600/spl deg/C was compared for various types of Si/SiO/sub 2/ interfaces. Our data suggest a correlation between the presence of stressed bonds in the SiO/sub 2/ network near the Si/Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d25cc1f81279181e0ac2a133c1b8d3b
https://doi.org/10.1109/23.819121
https://doi.org/10.1109/23.819121
Publikováno v:
Microelectronic Engineering. 48:363-366
We report experimental results suggesting that mobile protons are generated at strained SiOSi bonds near the Si SiO 2 interface during annealing in forming gas. Our data further suggest that the presence of the top Si layer plays a crucial role
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c30cef7ced134b8f6b24ccfa638747d0
https://doi.org/10.1016/s0167-9317(99)00406-2
https://doi.org/10.1016/s0167-9317(99)00406-2
Publikováno v:
Microelectronic Engineering. 48:167-170
The results of a study of the proton generation reaction in Si/SiO 2 /Si structures during forming gas (N 2 , H 2 ) annealing are presented. The main objective of the experiment was to determine the type of the reaction, i.e. to ascertain whether the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ae75529b051e05c8fc54bea4908f408
https://doi.org/10.1016/s0167-9317(99)00363-9
https://doi.org/10.1016/s0167-9317(99)00363-9
Autor:
Daniel M. Fleetwood, Bruce L. Draper, R. A. B. Devine, Karel Vanheusden, J.R. Schwank, William L. Warren
Publikováno v:
Journal of Non-Crystalline Solids. 254:1-10
It is shown how mobile H{sup +} ions can be generated thermally inside the oxide layer of Si/SiO{sub 2}/Si structures. The technique involves only standard silicon processing steps: the nonvolatile field effect transistor (NVFET) is based on a standa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::235472ea8b6de918140058c148746698
https://doi.org/10.1016/s0022-3093(99)00366-x
https://doi.org/10.1016/s0022-3093(99)00366-x
Autor:
Todd M. Alam, Daniel Harvey Doughty, Cory J. Tafoya, David Ingersoll, Mark A. Rodriguez, Karel Vanheusden, Timothy J. Boyle
Publikováno v:
Chemistry of Materials. 10:2270-2276
A nonaqueous coprecipitation process has been developed to prepare controlled stoichiometry lithium cobalt oxide precipitates. The process involved mixing a methanolic “LiCo(NO3)3” solution with a methanolic solution containing tetramethylammoniu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9585b634832b042407203e1e4f32d3ad
https://doi.org/10.1021/cm9802088
https://doi.org/10.1021/cm9802088
Autor:
Klaus Kunze, Karel Vanheusden
Publikováno v:
NIP & Digital Fabrication Conference. 22:601-603
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd5301e2ea99b4711ae63750be6e1ba5
https://doi.org/10.2352/issn.2169-4451.2006.22.1.art00076_2
https://doi.org/10.2352/issn.2169-4451.2006.22.1.art00076_2
Autor:
L. B. Archer, Robert M. Wallace, Karel Vanheusden, J.R. Schwank, William L. Warren, R. A. B. Devine, Bruce L. Draper, Daniel M. Fleetwood, M.G. Knoll, P.S. Winokur, Marty R. Shaneyfelt
Publikováno v:
IEEE Transactions on Nuclear Science. 44:1789-1798
A low-voltage, radiation-tolerant, nonvolatile field effect transistor (NVFET) memory involving proton motion in SiO/sub 2/ is illustrated in both bulk Si and silicon-on-insulator devices. We discuss a mechanism by which the protons are created in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b809167b07177cfadba499bfae2a9ebf
https://doi.org/10.1109/23.658944
https://doi.org/10.1109/23.658944
Publikováno v:
Journal of Non-Crystalline Solids. 216:116-123
Si/SiO2/Si structures produced by high temperature processing have been annealed in atmospheres containing forming gas (5% H2, 95% N2 or 5% D2, 95% N2) at temperatures in the range 200–900°C. For temperatures ≥ 500°C spontaneous positive electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bee44c14e77016c93dff5daa31ef4043
https://doi.org/10.1016/s0022-3093(97)00178-6
https://doi.org/10.1016/s0022-3093(97)00178-6
Autor:
William L. Warren, J. Caruso, David R. Tallant, M. J. Hampden-Smith, Karel Vanheusden, T. T. Kodas, Carleton H. Seager
Publikováno v:
Journal of Luminescence. 75:11-16
Electron paramagnetic resonance, optical absorption, and photoluminescence spectroscopy have been combined to characterize ZnO powders that were prepared by spray pyrolysis. We generally observe a good correlation between the 510 nm green emission in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::885e0ccdf88f071ea05c19d9b3c010f7
https://doi.org/10.1016/s0022-2313(96)00096-8
https://doi.org/10.1016/s0022-2313(96)00096-8