Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Karel Domanský"'
Publikováno v:
Journal of The Electrochemical Society. 144:L75-L78
A method of selectively doping the polyaniline gates of chemically sensitive field-effect transistors (CHEMFETs) has been demonstrated. Activated and inactivated gates located on the same chip were exposed to a solution containing palladium. The acti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f474c506e778d5df476131645aaa8090
https://doi.org/10.1149/1.1837558
https://doi.org/10.1149/1.1837558
Autor:
Thomas B. Hall, Karel Domanský, Mira Josowicz, Jiří Janata, David L. Baldwin, Jing Li, Jay W. Grate
Publikováno v:
Analytical chemistry. 70(3)
A sensor array for analyzing hydrogen and ammonia gas mixtures in humid air has been developed, built into a rugged system, and calibrated for laboratory testing. The sensor array is comprised of four chemically sensitive field-effect transistors (CH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d54608b23522f096795aa79b9dd14da2
https://pubmed.ncbi.nlm.nih.gov/21644746
https://pubmed.ncbi.nlm.nih.gov/21644746
Publikováno v:
The Analyst. 118:335-340
Fabrication of reliable chemically sensitive field effect transistors still poses significant technical difficulties. Problems related to integrity of the solid state part of the device, integrity of the final sensor package, definition of the sensit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e903efcab3ca2d10c92ad505900600a5
https://doi.org/10.1039/an9931800335
https://doi.org/10.1039/an9931800335
Publikováno v:
Applied Physics Letters. 60:2074-2076
The relationship between the pinhole density in silicon nitride layers deposited on oxide‐silicon structures and etching in buffered hydrofluoric acid is investigated in relation to the cooling down rate after Si3N4 deposition and subsequent anneal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f7240126009ecab00a942077772ff44
https://doi.org/10.1063/1.107093
https://doi.org/10.1063/1.107093
Autor:
Karel Domanský, Ji v{r}´i Macur
Publikováno v:
Japanese Journal of Applied Physics. 32:5136-5137
Partial discharges on the surface of an insulator usually have a local character. A narrow conducting channel in the cavity under an electrode can act as a virtual electrode. The virtual electrode temporarily changes the parameters of the metal-insul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6f5acc99762d5b8c10a7dc1e77e77a3
https://doi.org/10.1143/jjap.32.5136
https://doi.org/10.1143/jjap.32.5136
Autor:
Ji vrí Janata, Karel Domanský
Publikováno v:
Japanese Journal of Applied Physics. 34:5054
A gas microflowmeter based on a potentiometric chemical sensor is demonstrated. The flowmeter operates on the hot-wire principle. Electric current is passed through a platinum microbridge. A preset bridge resistance is kept constant by regulating the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93947d5d229f5488c1db6044d4d17b97
https://doi.org/10.1143/jjap.34.5054
https://doi.org/10.1143/jjap.34.5054
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:2121
A two‐layer lift‐off process using aluminum and an inorganic dielectric for patterning noble metals is described. It produces a smoothly sloped metallization pattern and is compatible with the deposition temperatures up to 350 °C. The metal laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bbce4696c875ee61c5c4df61c8e1c25
https://doi.org/10.1116/1.586552
https://doi.org/10.1116/1.586552
Autor:
Karel Domanský, Ji v{r}´i Macur
Publikováno v:
Japanese Journal of Applied Physics. 30:860
Measurement of the impulse noise of partial discharges (PD) in previous paper1) has been carried out. To make a relation between obtained experimental results on discharge pulses and geometrical properties of cavities which cause partial discharges a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c9c07ac0742972432099cf40cc61629
https://doi.org/10.1143/jjap.30.860
https://doi.org/10.1143/jjap.30.860
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