Comparative Study of FinFET and FDSOI Nanometric Technologies Based on Manufacturing Defect Testability

Autor: Karel, Amit

Deux innovations en matière de procédés technologiques des semi-conducteurs sont des alternatives à la technologie traditionnelle des transistors MOS (« Metal-Oxide-Semiconductor ») « Bulk » planaires : d’une part le silicium totalement dé

Externí odkaz: http://www.theses.fr/2017MONTS084/document

Detection of resistive open and short defects in FDSOI under delay-based test: Optimal VDD and body biasing conditions

Autor: Karel, Amit, Azaïs, Florence, Comte, Mariane, Galliere, Jean-Marc, Renovell, Michel, Singh, Keshav

Publikováno v: 22nd European Test Symposium
ETS: European Test Symposium
ETS: European Test Symposium, May 2017, Limassol, Cyprus. ⟨10.1109/ETS.2017.7968208⟩

International audience; This paper presents a comprehensive study towards the identification and quantification of the detectability improvement of resistive open and short defects, brought by specific supply voltage and body biasing conditions appli

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a7a24c9d33f195290cf0f4131ccb4799
https://hal.archives-ouvertes.fr/hal-01709615

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