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of 146
pro vyhledávání: '"Kardynal, B."'
Surface phonon-polaritons propagating along interfaces of polar dielectrics coexist with excitons in many van der Waals heterostructures, so understanding their mutual interactions is of great interest. Here, we investigate the type I surface phonon
Externí odkaz:
http://arxiv.org/abs/2402.04439
Publikováno v:
Nature Photonics 2, 425-428 (2008)
Avalanche photodiodes are widely used as practical detectors of single photons.1 Although conventional devices respond to one or more photons, they cannot resolve the number in the incident pulse or short time interval. However, such photon number re
Externí odkaz:
http://arxiv.org/abs/0807.0330
Publikováno v:
Appl. Phys. Lett. 91, 041114(2007)
InGaAs avalanche photodiodes (APDs) are convenient for single photon detection in the near-infrared (NIR) including the fibre communication bands (1.31/1.55 $\mu$m). However, to suppress afterpulse noise due to trapped avalanche charge, they must be
Externí odkaz:
http://arxiv.org/abs/0707.4307
Autor:
Nicholas, R. J., Takashina, K., Lakrimi, M., Kardynal, B., Khym, S., Mason, N. J., Symons, D. M., Maude, D. K., Portal, J. C.
The electrical transport properties of a bipolar InAs/GaSb system have been studied in magnetic field. The resistivity oscillates between insulating and metallic behaviour while the quantum Hall effect shows a digital character oscillating from 0 to
Externí odkaz:
http://arxiv.org/abs/cond-mat/9912122
Autor:
Bangert, U., Stewart, A., O’Connell, E., Courtney, E., Ramasse, Q., Kepaptsoglou, D., Hofsäss, H., Amani, J., Tu, J.-S., Kardynal, B.
Publikováno v:
In Ultramicroscopy May 2017 176:31-36
Akademický článek
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Autor:
Bui, M. N., Rost, S., Auge, M., Tu, J.-S., Zhou, L., Aguilera, I., Blügel, S., Ghorbani Asl, M., Krasheninnikov, A., Hashemi, A., Komsa, H.-P., Jin, L., Kibkalo, L., O’Connell, E. N., Ramasse, Q. M., Bangert, U., Hofsäss, H. C., Grützmacher, D., Kardynal, B. E.
Publikováno v:
npj 2D Materials and Applications 6(2022), 42
In this work, we study ultra-low energy implantation into MoS₂ monolayers to evaluate the potential of the technique in two-dimensional materials technology. We use 80 Se⁺ ions at the energy of 20 eV and with fluences up to 5.0 · 10¹⁴ cm⁻²
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4577::71989be2c790afdece336f53c6da3a9c
https://www.hzdr.de/publications/Publ-34725-1
https://www.hzdr.de/publications/Publ-34725-1
Autor:
Müller, M. R., Gumprich, A., Ecik, E., Kallis, K. T., Winkler, F., Kardynal, B., Petrov, I., Kunze, U., Knoch, J.
Publikováno v:
Journal of Applied Physics; 2015, Vol. 118 Issue 14, p145305-1-145305-6, 6p, 3 Diagrams, 2 Charts, 2 Graphs
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures 2002 12(1):161-164
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures 2002 12(1):293-295