Zobrazeno 1 - 10
of 191
pro vyhledávání: '"Karaseov, P. A."'
Autor:
Anton Klevtsov, Platon Karaseov, Alexander Azarov, Konstantin Karabeshkin, Elizaveta Fedorenko, Andrei Titov, Andrej Kuznetsov
Publikováno v:
APL Materials, Vol 12, Iss 11, Pp 111121-111121-8 (2024)
The rhombohedral phase of gallium oxide (α-Ga2O3) is of interest because of its highest bandgap among the rest of the Ga2O3 polymorphs, making it particularly attractive in applications. However, even though the ion beam processing is routinely used
Externí odkaz:
https://doaj.org/article/c0e6517dcc0d4254b6156f76d441526e
Autor:
Azarov, Alexander, Venkatachalapathy, Vishnukanthan, Karaseov, Platon, Titov, Andrei, Karabeshkin, Konstantin, Struchkov, Andrei, Kuznetsov, Andrej
Publikováno v:
Scientific Reports 12, 15366 (2022)
Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga2O3) which is a promising ultra-wide bandgap semiconductor exhibiting phase instability for high enough strain/disorder levels. In the pre
Externí odkaz:
http://arxiv.org/abs/2204.13302
Autor:
Karaseov, P. A.1 (AUTHOR) Platon.Karaseov@spbstu.ru, Karabeshkin, K. V.1 (AUTHOR), Struchkov, A. I.1 (AUTHOR), Pechnikov, A. I.2,3 (AUTHOR), Nikolaev, V. I.2,3 (AUTHOR), Andreeva, V. D.1 (AUTHOR), Titov, A. I.1 (AUTHOR) Andrei.Titov@rphf.spbstu.ru
Publikováno v:
Semiconductors. Oct2023, Vol. 57 Issue 10, p459-464. 6p.
Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 17, Iss 2 (2024)
This work continues the studies of low-threshold field electron emission from thin (6 – 10 nm) films of refractory metals (Mo or Zr) deposited on flat Si substrates. Now, we have investigated the changes in the films’ morphology induced by thermo
Externí odkaz:
https://doaj.org/article/e4c50753f6d444b386f84a5bcae758f6
Akademický článek
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Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 16, Iss 4 (2023)
In the paper, the distributions of structure damage created in alpha-phase of gallium oxide by keV fluorine, phosphorus and xenon ion irradiation, have been obtained at room temperature. A noticeable effect of the average individual collision cascade
Externí odkaz:
https://doaj.org/article/10748888774b4419bbbad006c8966cb1
Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 16, Iss 4 (2023)
In the paper, the interaction of an accelerated C60 fullerene ion with silicon monocrystal surface has been studied using molecular dynamics simulation. The dependence of a resulting crater size and sputtering yield on the initial size of the target
Externí odkaz:
https://doaj.org/article/b3a6dfc45f9e42beaf9d70e0d8f9682e
Autor:
Alexander Azarov, Vishnukanthan Venkatachalapathy, Platon Karaseov, Andrei Titov, Konstantin Karabeshkin, Andrei Struchkov, Andrej Kuznetsov
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-7 (2022)
Abstract Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga2O3) which is a promising ultra-wide bandgap semiconductor exhibiting phase instability for high enough strain/disorder levels. I
Externí odkaz:
https://doaj.org/article/22e9f397d7654c5a9074d19199508db8
Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 15, Iss 2 (2022)
The article deals with the technology of 64Cu isotope production by cyclotron proton irradiation of nickel foil of natural isotopic composition. In order to produce the 64Cu isotope, three nickel samples were irradiated with 13 MeV protons (beam curr
Externí odkaz:
https://doaj.org/article/b78617f545664244b3a054bd7638822a
Akademický článek
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