Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Karam Cho"'
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 2, Pp 99-107 (2023)
Binary neural networks (BNNs) have shown an immense promise for resource-constrained edge artificial intelligence (AI) platforms. However, prior designs typically either require two bit-cells to encode signed weights leading to an area overhead, or r
Externí odkaz:
https://doaj.org/article/330e2de940344536b49ad82d2339d95f
Autor:
Karam Cho, Sumeet Kumar Gupta
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 8, Iss 2, Pp 157-165 (2022)
Valley-spin hall (VSH) effect in monolayer WSe2 has been shown to exhibit highly beneficial features for nonvolatile memory (NVM) design. Key advantages of VSH-based magnetic random access memory (VSH-MRAM) over spin orbit torque (SOT)-MRAM include a
Externí odkaz:
https://doaj.org/article/96ce5ecc27fc44c4ba4dd47fd0924579
Autor:
Seung-Won Yeom, Banseok You, Karam Cho, Hyun Young Jung, Junsu Park, Changhwan Shin, Byeong-Kwon Ju, Jong-Woong Kim
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Abstract Improving the performance of resistive switching memories, while providing high transparency and excellent mechanical stability, has been of great interest because of the emerging need for electronic wearable devices. However, it remains a g
Externí odkaz:
https://doaj.org/article/a19fc4c7352142cab9a3fb840579b5e3
Publikováno v:
IEEE Transactions on Electron Devices. 69:1667-1676
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e67b97233ea751d6ee4acfeb1c6614a5
https://doi.org/10.1109/ted.2021.3135475
https://doi.org/10.1109/ted.2021.3135475
Publikováno v:
DRC
As one of endeavors to efficiently process emerging data-intensive workloads ( e.g . in deep neural networks (DNNs)), compute-in-memory (CiM) has been considered as a promising computing paradigm. It performs computation ( e.g . dot products between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::636c356f9a475d1f0f940a6f03833a60
https://doi.org/10.1109/drc52342.2021.9467139
https://doi.org/10.1109/drc52342.2021.9467139
Autor:
Karam Cho, Sandeep Krishna Thirumala, Niharika Thakuria, Sumeet Kumar Gupta, Xiangkai Liu, Zhihong Chen
Publikováno v:
DRC
By virtue of the broken inversion symmetry and preserved time-reversal symmetry in monolayer WSe 2 , electrons from K and K’ valleys exhibit opposite spins [1] . Thus, when charge current ( I C ) flows, transverse spin currents ( I S ) are generate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34d33cdecfa556a3df7a6929180a6727
https://doi.org/10.1109/drc50226.2020.9135153
https://doi.org/10.1109/drc50226.2020.9135153
Autor:
Hyun Young Jung, Junsu Park, Jong-Woong Kim, Ban Seok You, Karam Cho, Seung Won Yeom, Changhwan Shin, Byeong Kwon Ju
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
SCIENTIFIC REPORTS(7)
Scientific Reports
SCIENTIFIC REPORTS(7)
Scientific Reports
Improving the performance of resistive switching memories, while providing high transparency and excellent mechanical stability, has been of great interest because of the emerging need for electronic wearable devices. However, it remains a great chal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4965c2fe3705ae0c64375725866af3b5
https://doaj.org/article/a19fc4c7352142cab9a3fb840579b5e3
https://doaj.org/article/a19fc4c7352142cab9a3fb840579b5e3
Autor:
V. Raghunathan, Zhihong Chen, Karam Cho, Sumeet Kumar Gupta, Sandeep Krishna Thirumala, Niharika Thakuria, Terry Y. T. Hung, Arnab Raha
Publikováno v:
DRC
We propose valley-coupled spintronic devices based on monolayer WSe 2 that utilize Valley-Spin Hall (VSH) effect to switch nano-magnets. The unique features of the proposed device are (a) the ability to switch magnets with perpendicular magnetic anis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::566149c38e1872b5d2a2d8cd462412b7
https://doi.org/10.1109/drc46940.2019.9046398
https://doi.org/10.1109/drc46940.2019.9046398
Publikováno v:
JSTS:Journal of Semiconductor Technology and Science. 16:346-351
Titanium dioxide (TiO₂) films are deposited by atomic layer deposition (ALD) using titanium isopropoxide (TTIP) and H₂O as precursors. The operating instructions for the ALD equipment are described in detail, along with the settings for relevant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b62fbc2d903d477b4d5dd7dd906c321
https://doi.org/10.5573/jsts.2016.16.3.346
https://doi.org/10.5573/jsts.2016.16.3.346
Publikováno v:
JSTS:Journal of Semiconductor Technology and Science. 16:185-190
A 70-A nanowire field-effect transistor (FET) for sub-10-nm CMOS technology is designed and simulated in order to investigate the impact of an oxide trap on random telegraph noise (RTN) in the device. It is observed that the drain current fluctuation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff2c17d6903e82cf26a079a6832d00f2
https://doi.org/10.5573/jsts.2016.16.2.185
https://doi.org/10.5573/jsts.2016.16.2.185