Výsledky vyhledávání - "Kapitanchuk, L.M."

We present experimental results concerning a high density of structural defects (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They appear in the course of firing Au Pd Ti Pd -Si n ohmic contact at 450С for 10 m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::af4fd491a53bba93ca562c3a9f003cd7
http://dspace.nbuv.gov.ua/handle/123456789/117675

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Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts

Autor: Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Kapitanchuk, L.M., Klad’ko, V.P., Konakova, R.V., Kuchuk, A.V., Korostinskay, T.V., Pilipchuk, A.S., Sheremet, V.N., Mazur, Yu.I., Ware, M.E., Salamo, G.J.

We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that formation of ohmic contact

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::2669aecaaaed0e6c427c1e25b1969925
http://dspace.nbuv.gov.ua/handle/123456789/117817

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Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density

Autor: Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Zhilyaev, Yu.V., Kapitanchuk, L.M., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Naumov, A.V., Panteleev, V.V., Sheremet, V.N.

We studied temperature dependences of the resistivity, Pc(T) , of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n - GaN and n - AlN with a high dislocation density. BothPc(T) curves have portions of exponential decrease, as well as those with

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::f8911fcac00457aa547c2f1224eaf8ef
http://dspace.nbuv.gov.ua/handle/123456789/118725

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The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts

Autor: Belyaev, A.E., Boltovets, N.S., Kapitanchuk, L.M., Konakova, R.V., Kladko, V.P., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Korostinskaya, T.V., Ataubaeva, A.B., Nevolin, P.V.

We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact resistivity increases

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::52cdda2336882ca72331d590b3f94e82
http://dspace.nbuv.gov.ua/handle/123456789/117698

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Development of high-stable contact systems to gallium nitride microwave diodes

Autor: Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kapitanchuk, L.M., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Sheremet, V.N., Sveshnikov, Yu.N.

High-stable heat-resistant low-resistance contact systems with diffusion barriers involving quasi-amorphous TiBx layers are suggested and studied. We have performed the structural and morphological investigations along with studies of Auger concentra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::0f10a712cfa779b68b3cdd6da5a66e56
http://dspace.nbuv.gov.ua/handle/123456789/118341

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Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures

Autor: Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Mitin, V.F., Mitin, E.V., Lytvyn, O.S., Kapitanchuk, L.M.

We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) and analytical (AES) techniq

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::be4b0b33bf8e22ff2685f3e94ed87d35
http://dspace.nbuv.gov.ua/handle/123456789/121434

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Thermoexfoliated graphite — transitional metal nanocomposites

Autor: Len, T.A., Matzui, L.Yu., Babich, N.G., Kopan, V.S., Kapitanchuk, L.M.

Composite materials (CM) have been obtained by chemical deposition of metal on graphite surface. It has been shown that TEG-nanoscaled transition metal CM can be prepared both by long-term salt decomposition on TEG surface and simultaneous reduction

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::27d481e00d7a4d69285558c8c64174c9
http://dspace.nbuv.gov.ua/handle/123456789/139471

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