Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Kap-Soo Yoon"'
Autor:
Gwang Guk An, Ja Bin Lee, Seung Mo Yang, Jae Hong Kim, Woo Seong Chung, Kap Soo Yoon, Jin Pyo Hong
Publikováno v:
AIP Advances, Vol 5, Iss 2, Pp 027137-027137-7 (2015)
We examine highly stable perpendicular magnetic anisotropy (PMA) features of [Co/Pd]10 multilayers (MLs) versus Pd thickness at various ex-situ annealing temperatures. Thermally stable PMA characteristics were observed up to 500 °C, confirming the s
Externí odkaz:
https://doaj.org/article/e0ab3ffac6ca4296916b39cdd46936be
Autor:
Jin Pyo Hong, Kap Soo Yoon
Publikováno v:
Journal of Magnetism and Magnetic Materials. 423:7-11
We address the abnormal anisotropic magnetoresistance (AMR) reversal feature of half-metallic polycrystalline Fe 3 O 4 films occurring at a specific temperature. Experimental results revealed a positive to negative MR transition in the Fe 3 O 4 films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::087ded8de5e4cfc3a49c4a81bf4b96f9
https://doi.org/10.1016/j.jmmm.2016.09.067
https://doi.org/10.1016/j.jmmm.2016.09.067
Autor:
Jin Pyo Hong, Seungmo Yang, Hyunsik Im, Jae Yeon Lee, Taeyoon Kim, Kap Soo Yoon, Gwangho Baek, Jung Yup Yang, Soo Gil Kim
Publikováno v:
Scientific Reports
Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
Recent advances in oxide-based resistive switching devices have made these devices very promising candidates for future nonvolatile memory applications. However, several key issues remain that affect resistive switching. One is the need for generic a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5aea9e8fdc99c456c53b41a52fe5740
https://doi.org/10.1038/s41598-018-26997-y
https://doi.org/10.1038/s41598-018-26997-y
Publikováno v:
J. Mater. Chem. C. 2:10209-10216
Metal oxide semiconductors based on a solution process have facilitated major breakthroughs in the emerging field of flexible and transparent electronic devices. In particular, enhanced output performance of metal oxide semiconductors obtained by a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1b65fdad1736065cff3d845f02a0313
https://doi.org/10.1039/c4tc02096k
https://doi.org/10.1039/c4tc02096k
Autor:
Bong Seop Yang, Myung Soo Huh, Jaeyeong Heo, Cheol Seong Hwang, Hyeong Joon Kim, Kap-Soo Yoon, Sung-Hoon Yang, Sang Jin Han, Joohei Lee
Publikováno v:
Thin Solid Films. 518:1170-1173
The improved structural and electrical properties of tin-oxide films produced by using ultralow-pressure sputtering (ULPS) method are reported. The Hall mobility of the film (~ 13 cm2/V s) deposited using ULPS was about 1.5 times higher than that of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b1f89593c211e79951dce67c643c1f5
https://doi.org/10.1016/j.tsf.2009.05.051
https://doi.org/10.1016/j.tsf.2009.05.051
Autor:
Young Ho Do, Jin Pyo Hong, Won Joon Choi, Jung Yup Yang, Kap Soo Yoon, Chae Ok Kim, Ju Hyung Kim
Publikováno v:
Current Applied Physics. 7:147-150
Metal–oxide–semiconductor structures (MOS) with the embedded Co nanoparticles (NPs) were efficiently fabricated by utilizing an external laser irradiation technique for the application of nonvolatile memory. Images of high resolution transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a013e0a3c26d799ce9973cf7d00aed5
https://doi.org/10.1016/j.cap.2006.03.002
https://doi.org/10.1016/j.cap.2006.03.002
Publikováno v:
IEEE Transactions on Magnetics. 42:1495-1498
We report the magnetic behaviors of Fe/sub 3/O/sub 4/ thin films grown by zero field growth (ZFG) and field growth (FG) techniques during the sputtering process. In FG conditions, an in situ 300 Oe field during growth is applied to a substrate, induc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f1aad56c50cb9d3305286d377fffbb5
https://doi.org/10.1109/tmag.2006.871473
https://doi.org/10.1109/tmag.2006.871473
Publikováno v:
Journal of Magnetism and Magnetic Materials. 285:125-129
Magnetic tunnel junctions (MTJs) with Fe 3 O 4 electrodes were prepared to observe spin- dependent tunneling effect of half-metallic materials through an insulating AlO x barrier at room temperature (RT). In addition, the plasma treatment with Ar gas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91c8106213f7901e7c51e69989b8bb11
https://doi.org/10.1016/j.jmmm.2004.07.025
https://doi.org/10.1016/j.jmmm.2004.07.025
Autor:
Ji-Soo Oh, Woo-Geun Lee, Jae-Woo Park, Young-Wook Lee, Min-Koo Han, Soo-Yeon Lee, Kap-Soo Yoon, Sun-Jae Kim, Hyun-Jung Lee
Publikováno v:
IEEE Electron Device Letters. 33:821-823
We fabricated two types of double-gate amorphous hafnium-indium-zinc oxide thin-film transistors: a back-channel etch (BCE) type and an etch stopper (ES) type. The normalized on-current and field-effect mobility of the BCE type are larger than those
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ebccc23f59d042ce8a29dd3f6bdb153
https://doi.org/10.1109/led.2012.2190262
https://doi.org/10.1109/led.2012.2190262
Autor:
Kap-Soo Yoon, Soo-Yeon Lee, Woo-Geun Lee, Sun-Jae Kim, Jang Yeon Kwon, Min-Koo Han, Young-Wook Lee
Publikováno v:
IEEE Electron Device Letters. 33:218-220
We investigated the reliability of oxide TFTs under negative gate bias stress combined with various intensities of light having a wavelength of 400 nm. Light illumination caused a considerable Vth shift toward negative direction, as reported in previ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b19b2cffb147970daadbade844b751d
https://doi.org/10.1109/led.2011.2177633
https://doi.org/10.1109/led.2011.2177633