Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Kaoru Kadoiwa"'
Autor:
Hajime Sasaki, Takeshi Ohshima, Tomoki Oku, Shinobu Onoda, Takayuki Hisaka, Eiji Taguchi, Hidehiro Yasuda, Kaoru Kadoiwa
Publikováno v:
Microelectronics Reliability. 81:312-319
Irradiation effects produced by high energy heavy ions and electrons on AlGaN/GaN high electron mobility transistor (HEMT) were investigated using ultra-high voltage electron microscopy (HVEM), optical measurements, and device characteristics analysi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::30f22a3356f025a7797feffa5de00ba0
https://repo.qst.go.jp/records/48723
https://repo.qst.go.jp/records/48723
Publikováno v:
Optical Review. 21:43-47
High-power laser diodes (LDs) are strongly demanded as a light source of display applications. In this work, the reliability of a high-power 638 nm broad stripe (BS) LD was studied from the viewpoint of not only gradual degradation but also catastrop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d82c25ae5f73f4357c38af535986d9f
https://doi.org/10.1007/s10043-014-0007-z
https://doi.org/10.1007/s10043-014-0007-z
Publikováno v:
SPIE Proceedings.
Reliabilities of the 638-nm triple emitter broad area laser diode (BA-LD) with the window-mirror structure were studied. Methodology to estimate mean time to failure (MTTF) due to catastrophic optical mirror degradation (COMD) in reasonable aging dur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25799ade18918e14f0f3df725706a3cb
https://doi.org/10.1117/12.2211851
https://doi.org/10.1117/12.2211851
Publikováno v:
IEICE Electronics Express. 9:1592-1597
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fd0019f3cf9cd2bdf433d313c44b07f
https://doi.org/10.1587/elex.9.1592
https://doi.org/10.1587/elex.9.1592
Publikováno v:
Journal of Crystal Growth. 297:44-51
Zinc (Zn) diffusion through MOCVD-fabricated InP and InGaAsP layers, and the corresponding Zn doping profile at the heterojunction interface were studied as part of the doping profile control for laser diodes. It was found that the Zn doping profile
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c09d52a973b4567dc04a0b9ab6f9c1aa
https://doi.org/10.1016/j.jcrysgro.2006.09.028
https://doi.org/10.1016/j.jcrysgro.2006.09.028
Publikováno v:
SPIE Proceedings.
Laser based displays, such as 10 lm to 70K lm laser projectors and laser diode (LD) backlight liquid crystal display (LCD) TVs, have attracted much attention because of the large gamut, low power consumption, and so on. Laser light sources for the di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ab277a8c5d8b2e345db4829b3b5786c
https://doi.org/10.1117/12.2037110
https://doi.org/10.1117/12.2037110
Publikováno v:
Journal of Crystal Growth. 203:18-24
Dependence of layer surface morphology and electrical properties on growth conditions, growth temperature and supplying conditions of group-V sources such as solid-As and AsH 3 hydride gas, has been investigated with specially designed MBE system, in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65888927192f7472963060e3bf165854
https://doi.org/10.1016/s0022-0248(99)00056-1
https://doi.org/10.1016/s0022-0248(99)00056-1
Autor:
N. Fujii, M. Tsugami, Kaoru Kadoiwa, Norio Hayafuji, M. Kato, T. Ishida, S. Takamiya, Shigeru Mitsui, Takuji Sonoda, T. Motoda
Publikováno v:
Journal of Crystal Growth. 145:147-152
The mechanism of passivation effect on the hole concentration in Zn-doped (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P layers grown by metalorganic chemical vapor deposition (MOCVD) is investigated. It is found that oxygen concentration in AlGaInP should be suppres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51d93671ba34cd9fb29cbb29fb82ca9d
https://doi.org/10.1016/0022-0248(94)91042-1
https://doi.org/10.1016/0022-0248(94)91042-1
Autor:
S. Takamiya, T. Motoda, Takuji Sonoda, Akihiro Shima, M. Tsugami, Shigeru Mitsui, M. Kato, Kaoru Kadoiwa
Publikováno v:
Journal of Crystal Growth. 145:650-654
Multi-wafer growth of highly uniform and high-quality AlGaInP/GaInP using a high-speed rotating disk metalorganic chemical vapor deposition (MOCVD) has been successfully realized by suppressing In desorption and oxygen contamination at high growth te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e1033db282e788eaf4c581889e6021c
https://doi.org/10.1016/0022-0248(94)91121-5
https://doi.org/10.1016/0022-0248(94)91121-5
Autor:
T. Kamizato, Tetsuya Nishimura, S. Arimoto, K. Mizuguchi, H. Watanabe, Kaoru Kadoiwa, T. Motoda, Toshio Murotani
Publikováno v:
Journal of Crystal Growth. 124:757-762
We introduced a multiple quantum barrier (MQB) which was grown by MOCVD between the active layer and p-cladding layer to enhance potential barrier height. The MOCVD system was improved to realize the growth of MQB structures for the first time. We co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8aec6a7fd33fc88105827dee549da9e0
https://doi.org/10.1016/0022-0248(92)90548-w
https://doi.org/10.1016/0022-0248(92)90548-w