Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Kao-Chin Lin"'
Publikováno v:
Solid State Communications. 151:87-92
We study the electronic transport through a single-molecule transistor (SMT) by considering the phonon-associated tunneling rate. We find that the electron–phonon interaction (EPI) changes the constant conductivities of the leads into a multi-chann
Publikováno v:
Solid State Communications. 150:799-803
We study the electronic transport in the presence of electron–phonon interaction (EPI) for a molecular electronic device. Instead of mean field approximation (MFA), the related phonon correlation function is conducted with the Langreth theorem (LT)
Autor:
Kao-Chin Lin, Der-San Chuu
Publikováno v:
Solid State Communications. 134:831-835
The spin-flip associated transport based on the Anderson model is studied. It is found that the electrons are scattered due to spin-flip effect via the normal, mixed and Kondo channels. The spin-flip scattering via Kondo channel enhances the Kondo re
Autor:
Ming Chieh Lin, Der-San Chuu, Chih-Wei Luo, Fu-Kuo Hsueh, Hsun Chuan Shih, Wu-Ching Chou, Kao Chin Lin, J. W. Chou, Yao-Jen Lee, Wen Chung Fan, Chi-Tsu Yuan
Publikováno v:
Nanotechnology. 20(30)
We observed the reflectance spectra of three different nano-scale array structures of Au-coated silicon nanorods. The trends of the reflectance spectra indicate that the localized surface plasmon modes can be spatially controlled by manipulating geom
Autor:
Der-San Chuu, Kao-Chin Lin
Publikováno v:
Physical Review B. 77
The electron-photon interaction associated with the uncertainty based tunneling (EPAUT) in the parallel double quantum dot system is studied. In the considered system, the electron interacts with the single mode detuning quantum photon field, i.e., $
Autor:
Der-San Chuu, Kao-Chin Lin
Publikováno v:
Physical Review B. 72
The ballistic conductance of a coupled $T$-shaped semiconductor quantum wire (CTQW) are studied. Two types of CTQW are considered, one of which is a $\Pi $-shaped quantum wire ($\Pi $QW) which consists of two transverse wires on the same side of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7325ff243e3be48538e80b99731034e4
http://arxiv.org/abs/cond-mat/0306361
http://arxiv.org/abs/cond-mat/0306361
Autor:
Kao-Chin Lin, Der-San Chuu
Publikováno v:
Physical Review B. 64
Publikováno v:
2014 9th International Microsystems, Packaging, Assembly & Circuits Technology Conference (IMPACT); 2014, p150-153, 4p