Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Kanya Sugitani"'
Autor:
Takuo Sasaki, Takuya Iwata, Kanya Sugitani, Takahiro Kawamura, Toru Akiyama, Masamitu Takahasi
Publikováno v:
Applied Physics Express, Vol 17, Iss 2, p 025502 (2024)
The three-dimensional ordering of the gallium (Ga) adlayers on GaN(0001) and (000 $\bar{1}$ ) surfaces was probed using in situ X-ray scattering under MBE conditions. An ordered bilayer of Ga forms on GaN(0001) but the ordering decreases at substrate
Externí odkaz:
https://doaj.org/article/936deca622c74e9ca87b11697cd3d6d7
Publikováno v:
2019 Compound Semiconductor Week (CSW).
In situ synchrotron X-ray reciprocal space mapping was carried out to investigate the evolution of lattice strain and crystal structure of InGaN/GaN heterostructure nanowires grown by molecular beam epitaxy. At the beginning of the growth, the InGaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6467bae557c6924156c6916ea4cf54ea
https://doi.org/10.1109/iciprm.2019.8819209
https://doi.org/10.1109/iciprm.2019.8819209
Publikováno v:
2019 Compound Semiconductor Week (CSW).
The molecular beam epitaxial (MBE) growth of twenty-period InGaN/GaN multi-quantum-well (MQW) nanowires was investigated by in situ X-ray reciprocal space mapping (in situ RSM). The evolution of strain, composition, and their inhomogeneities during t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dedb2fa055c0060c0c6644672e7598e1
https://doi.org/10.1109/iciprm.2019.8819193
https://doi.org/10.1109/iciprm.2019.8819193