Zobrazeno 1 - 10
of 756
pro vyhledávání: '"Kanski J"'
Autor:
Nicolaï, L., Mariot, J. -M., Djukic, U., Wang, W., Heckmann, O., Richter, M. C., Kanski, J., Leandersson, M., Sadowski, J., Balasubramanian, T., Vobornik, I., Fujii, J., Braun, J., Ebert, H., Minár, J., Hricovini, K.
The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of
Externí odkaz:
http://arxiv.org/abs/1807.00306
The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band vs. impurity band
Externí odkaz:
http://arxiv.org/abs/1608.06821
New detailed angle-resolved photoemission data are presented, revealing the existence of an Mn-induced state that extends into the band gap of GaAs. In sharp contrast to recent reports we observe that the state is highly dispersive. Spin resolved pho
Externí odkaz:
http://arxiv.org/abs/1410.8842
Resonant in situ photoemission from Mn 3d states in Ga_{1-x}Mn_{x}As is reported for Mn concentrations down to very dilute limit of 0.1 at %. The properties of the peak at the valence-band maximum reveal an effective interaction between Mn 3d states
Externí odkaz:
http://arxiv.org/abs/1310.0961
Autor:
Di Marco, I., Thunström, P., Katsnelson, M. I., Sadowski, J., Karlsson, K., Lebègue, S., Kanski, J., Eriksson, O.
Publikováno v:
Nature Communications 4, Article number: 2645 (2013)
After two decades from the discovery of ferromagnetism in Mn-doped GaAs, its origin is still debated, and many doubts are related to the electronic structure. Here we report an experimental and theoretical study of the valence electron spectrum of Mn
Externí odkaz:
http://arxiv.org/abs/1207.2887
Using synchrotron based photoemission, we have investigated the Mn-induced changes in Ga 3d core level spectra from as-grown ${\rm Ga}_{1-x}{\rm Mn}_{x}{\rm As}$. Although Mn is located in Ga substitutional sites, and does therefore not have any Ga n
Externí odkaz:
http://arxiv.org/abs/1207.1570
Thermally stimulated diffusion of Mn across the (Ga,Mn)As/GaAs interface has been studied by X-ray photoemission. Ga(0.95)Mn(0.05)As layers were capped with GaAs of different thickness 4, 6 and 8ML, and Mn diffusing through the GaAs layers was trappe
Externí odkaz:
http://arxiv.org/abs/0912.4680
Valence band photoemission with photon energies around the Mn2p excitation threshold has been used to study the development of nanowires catalyzed by MnAs particles. A gradual change in the spectra with increasing nanowire length is observed, such th
Externí odkaz:
http://arxiv.org/abs/0907.0247
The initial growth of MnBi on MnAs terminated (GaMn)As is studied by means of synchrotron based photoelectron spectroscopy. From analysis of surface core level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi
Externí odkaz:
http://arxiv.org/abs/0903.1266
Autor:
Sadowski, J., Dluzewski, P., Kret, S., Janik, E., Lusakowska, E., Kanski, J., Presz, A., Terki, F., Charar, S., Tang, D.
Publikováno v:
Nano Lett.; (Letter); 2007; 7(9); 2724 - 2728
GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs nanoislands, which
Externí odkaz:
http://arxiv.org/abs/0710.0888