Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Kanji Iizuka"'
Publikováno v:
Journal of Solid State Chemistry. 307:122804
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bb9ff47b9f5ae6a9061a6afc6122200
https://doi.org/10.1016/j.jssc.2021.122804
https://doi.org/10.1016/j.jssc.2021.122804
Autor:
Kanji, Iizuka
Publikováno v:
日本工業大学研究報告 = Report of researches, Nippon Institute of Technology. 47(2):97-98
The invention of metal-coated diamond particles can suppress thermal deterioration of the binders produced by heat grinding when cutting the tools that is, the bonding strength between the binder and diamond grains may be increased. The aim of this s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::f605de92454eed2dccb66e4c879af4d2
https://mlib3.nit.ac.jp/webopac/TC00542206
https://mlib3.nit.ac.jp/webopac/TC00542206
Publikováno v:
Journal of Crystal Growth. :26-29
We have used in in situ scanning tunneling microscopy to study GaAs(001) surface treated by As-free high temperature surface cleaning method. The temperatures ranged from 575 to 655 °C and an optimum temperature of 605 °C was found. Its surface had
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe52303b03ed46e9f145b76a7be28460
https://doi.org/10.1016/j.jcrysgro.2006.11.185
https://doi.org/10.1016/j.jcrysgro.2006.11.185
Publikováno v:
AIP Conference Proceedings.
To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) dro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16dbeda291c532494f67a0edacc06b8a
https://doi.org/10.1063/1.4878281
https://doi.org/10.1063/1.4878281
Publikováno v:
Journal of Crystal Growth. :41-45
Reduction of the density of protrusions on a cleaned GaAs surface by arsenic-free high-temperature surface cleaning performed in the preparation chamber of a molecular beam epitaxy system was investigated. The density of protrusions was found to decr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2be547f34f58b1b9e91c2baa6b231e78
https://doi.org/10.1016/s0022-0248(01)00629-7
https://doi.org/10.1016/s0022-0248(01)00629-7
Publikováno v:
Journal of Crystal Growth. :174-177
To facilitate an MBE regrowth on an AlGaAs epilayer surface which is easily oxidized in the atmosphere, a passivation layer was provided on the top of the AlGaAs surface. This layer was either a GaAs single layer or a GaAs/ultra-thin AlGaAs/GaAs doub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdf39dd3cd1c21d350eaa72e447a7eb9
https://doi.org/10.1016/s0022-0248(98)01310-4
https://doi.org/10.1016/s0022-0248(98)01310-4
Publikováno v:
Journal of Crystal Growth. :825-827
It is known that by capping InAs/GaAs quantum dots (QDs), photoluminescence (PL) exhibits blue shift because InAs QD shrinks by intermixing of InAs with GaAs matrix. Moreover, stacked structure of InAs QDs on GaAs, which was preferable for QD lasers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b396ad45bdda069ae2b96cbe340d0abf
https://doi.org/10.1016/j.jcrysgro.2006.11.326
https://doi.org/10.1016/j.jcrysgro.2006.11.326
Autor:
Hiroshi Okamoto, Yoshiyuki Takahira, Toshimasa Suzuki, Toshihiro Nishioka, Kazuo Matsumaru, Kanji Iizuka
Publikováno v:
Journal of Crystal Growth. :447-450
AlGaAs surfaces were cleaned by high-temperature heat treatment without As flux in a preparation chamber for regrowth of active layers by molecular beam epitaxy (MBE). Reflection high-energy electron diffraction from the cleaned AlGaAs surface showed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e200f23ecbba74e53924f0133c4f1d1
https://doi.org/10.1016/s0022-0248(96)00891-3
https://doi.org/10.1016/s0022-0248(96)00891-3
Adhesion Strength. Adhesion of Semiconductor and Superconductor Thin Films. Importance of Substrates
Publikováno v:
Journal of the Surface Finishing Society of Japan. 48:692-697
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c16e70629f5374f0c506f68d3c4ccc7
https://doi.org/10.4139/sfj.48.692
https://doi.org/10.4139/sfj.48.692