Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Kanjalochan Jena"'
Publikováno v:
Silicon. 14:8599-8608
In this article, the Authors have demonstrated and analyzed various analog/RF and linearity performance of a AlGaN/GaN gate recessed MOSHEMT (GR-MOSHEMT) grown on a Si substrate with mathematical modeling based TCAD simulation. Specifically, a Al2O3
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811923074
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fda003867117542c5bac2f23b02d1745
https://doi.org/10.1007/978-981-19-2308-1_8
https://doi.org/10.1007/978-981-19-2308-1_8
Publikováno v:
HEMT Technology and Applications ISBN: 9789811921643
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c38533c4a20ea26968553115c109d6f
https://doi.org/10.1007/978-981-19-2165-0_3
https://doi.org/10.1007/978-981-19-2165-0_3
Publikováno v:
HEMT Technology and Applications ISBN: 9789811921643
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d75601b8fcdcf0caf73b0710368abb8
https://doi.org/10.1007/978-981-19-2165-0_6
https://doi.org/10.1007/978-981-19-2165-0_6
Publikováno v:
Silicon. 14:2107-2114
In this article, GaN/ InxGa1 − xN based solar cell with Si substrate and SiCN buffer layer is investigated with the help of modeling and simulation. The performance of the designed device is best suited for the low cost photovoltaic applications in
Autor:
S. N. Mishra, Kanjalochan Jena
Publikováno v:
Journal of the Korean Physical Society. 74:349-357
This paper presents an analytical model of a bio-molecule-induced threshold voltage shift (ΔVth) in a normally-off AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) used as bio-particle sensors. In the analytical mode
Autor:
Sushanta S. Bordoloi, Rupam Goswami, K. Parvathi, Vikas Kumar Jha, Sourabh Singh Verma, Somendra Prasad, Kanjalochan Jena, Subham Mishra
Publikováno v:
Advances in Intelligent Systems and Computing ISBN: 9789811507502
This paper reports the fabrication and system design of a low cost charcoal based moisture sensor of dimension 1 cm × 1 cm × 260 μm. Seven different samples were prepared and calibrated for 25 μL of water. The sensitivities are reported for the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab3cc1475373c3ad4ba2c33a8077a07d
https://doi.org/10.1007/978-981-15-0751-9_1
https://doi.org/10.1007/978-981-15-0751-9_1
Publikováno v:
Materials Science in Semiconductor Processing. 53:66-71
In this paper a detail insight into the role of oxide/barrier interfacial charges (Nox) for shifting the threshold voltage (VT) of AlN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) is gained. A model is developed for VT
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811325526
This paper proposes an AlInN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) employing a gate-field-plated technique with an objective to investigate the dependence of RF power performance. Detailed RF power analysis of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46947dfa3fc35d8f9edbae00a3c81af1
https://doi.org/10.1007/978-981-13-2553-3_60
https://doi.org/10.1007/978-981-13-2553-3_60
Publikováno v:
IET Circuits, Devices & Systems. 10:423-432
In this paper, the authors present a polarisation dependent analytical model for DC, radio frequency (RF) and linearity characteristics of a proposed lattice-matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor (MOSHE