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Akademický článek

Movement and Adaptation of Migrant Workers: A Case Study of Lao Nationality Migrant Workers in Ban Phaeng District. Nakhon Phanom Province

Autor: Kanin Chueaduangpui, Narongrit Sumalee, Benjayamas Pilayon, Wisit Kidkhamsuan, Suriya khamwan, Sorat Praweenwongwuthi, Suriyan Surakreangkrai

Publikováno v: Journal of Humanities and Social Sciences Mahasarakham University, Vol 42, Iss 6, Pp 859-872 (2023)

The objectives of this qualitative research were to study the movement patterns of Lao nationals seeking work in the area and their adjustment to living within communities in Ban Phaeng District, Nakhon Phanom Province. Data was collected through in

Externí odkaz: https://doaj.org/article/c27f21d2869b4e1b970246ce53cb1047

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0.1- $\mu \text{m}$ InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71–76 and 81–86 GHz: Impact of Passivation and Gate Recess

Autor: P.M. Smith, Alice Vera, J. Diaz, James J. Komiak, K. H. George Duh, Kanin Chu, K. Nichols, Louis M. Mt. Pleasant, Peide D. Ye, Philip Seekell, Lin Dong, Dong Xu, Carlton T. Creamer, Xiaoping Yang, P.C. Chao, M. Ashman

Publikováno v: IEEE Transactions on Electron Devices. 63:3076-3083

We have developed 0.1- $\mu \text{m}$ gate-length InAlN/GaN high electron-mobility transistors (HEMTs) for millimeter-wave (MMW) power applications, particularly at 71–76 and 81–86 GHz bands. The impacts of depth and width of the gate recess groo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::94402cce99893677da7600801d3a1c6e
https://doi.org/10.1109/ted.2016.2579160

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GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz

Autor: Ray Kallaher, J. Diaz, John D. Blevins, Craig McGray, Scott Sweetland, P.C. Chao, Carlton T. Creamer, Glen D. Via, Kanin Chu

Publikováno v: MRS Advances. 1:147-155

A new device-first low-temperature bonded gallium nitride (GaN)-on-diamond high-electronic mobility transistor (HEMT) technology with state-of-the-art, radio frequency (RF) power performance is described. In this process, the devices were first fabri

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e29189623c3505644338c5265ae3090f
https://doi.org/10.1557/adv.2016.176

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50-nm Asymmetrically Recessed Metamorphic High-Electron Mobility Transistors With Reduced Source–Drain Spacing: Performance Enhancement and Tradeoffs

Autor: Dong Xu, Xiaoping Yang, K.H.G. Duh, L. Schlesinger, R. Isaak, R. A. Carnevale, P.M. Smith, P.C. Chao, P. Seekell, Lee Mohnkern, L. Mt. Pleasant, Alice Vera, R. G. Stedman, Kanin Chu

Publikováno v: IEEE Transactions on Electron Devices. 59:128-138

Whereas gate-length reduction has served as the major driving force to enhance the performance of GaAs- and InP-based high-electron mobility transistors (HEMTs) over the past three decades, the limitation of this approach begins to emerge. In this pa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e9e15afbb40d81766bcf6d61ec7f4150
https://doi.org/10.1109/ted.2011.2172614

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50-NM SELF-ALIGNED HIGH ELECTRON-MOBILITY TRANSISTORS ON GaAs SUBSTRATES WITH EXTREMELY HIGH EXTRINSIC TRANSCONDUCTANCE AND HIGH GAIN

Autor: P.M. Smith, P. Seekell, L. Mt. Pleasant, P.C. Chao, H. Karimy, Xiaoping Yang, R. Isaak, G. Cueva, R. A. Carnevale, L. Schlesinger, R. G. Stedman, Kanin Chu, Dong Xu, K.H.G. Duh, Alice Vera, W. Kong, B. Golja, Lee Mohnkern

Publikováno v: International Journal of High Speed Electronics and Systems. 20:393-398

We report the design, fabrication and characterization of metamorphic high electron-mobility transistors (MHEMTs) with self-aligned ohmic electrodes. In this work, asymmetrically recessed 50-nm Γ-gates have been successfully used as the shadow mask

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0e535e01a4f98357681968d6391ebb84
https://doi.org/10.1142/s0129156411006672

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Gate-Length Scaling of Ultrashort Metamorphic High-Electron Mobility Transistors With Asymmetrically Recessed Gate Contacts for Millimeter- and Submillimeter-Wave Applications

Autor: Xiaoping Yang, K Louie, W. Kong, K.H.G. Duh, P.C. Chao, D M Dugas, L. M. Pleasant, Dong Xu, Kanin Chu, H. Karimy, P. Seekell, P.M. Smith, Lee Mohnkern

Publikováno v: IEEE Transactions on Electron Devices. 58:1408-1417

We have fabricated and characterized ultrashort gate-length metamorphic high-electron mobility transistors (HEMTs) optimized for high gain performance for millimeter- and submillimeter-wave applications. In this paper, we have systematically evaluate

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5f4809043e31282a4c33007ff5dda810
https://doi.org/10.1109/ted.2011.2113250

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Analytical HFET $I$– $V$ Model in Presence of Current Collapse

Autor: C. Lee, Grigory Simin, Kanin Chu, Alexey Koudymov, P.C. Chao, A. Balistreri, Jose L. Jimenez, Michael Shur

Publikováno v: IEEE Transactions on Electron Devices. 55:712-720

A compact analytical model of short-channel AlGaN/GaN HEMTs in the presence of a current collapse is presented. The model is based on an experimentally established trapping mechanism at the gate edges and relies on significant differences between the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0071ca59467db1303e38f5f3ee911da7
https://doi.org/10.1109/ted.2007.915092

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Advanced Cooling Designs for GaN-on-Diamond MMICs

Autor: Kanin Chu, Amir Shooshtari, Carlton T. Creamer, Thomas Yurovchak, Serguei Dessiatoun, Michael M. Ohadi, Keith Lang, Adonis Kassinos, Geoffrey O. Campbell, Henry M. Eppich

Publikováno v: Volume 3: Advanced Fabrication and Manufacturing; Emerging Technology Frontiers; Energy, Health and Water- Applications of Nano-, Micro- and Mini-Scale Devices; MEMS and NEMS; Technology Update Talks; Thermal Management Using Micro Channels, Jets, Sprays.

Under the DARPA-sponsored ICECool Applications program, a microchannel cooling system using a 50-50 ethylene glycol-water mixture was optimized for cooling a high-power GaN-on-Diamond Monolithic Microwave Integrated Circuit (MMIC). Automated multi-ob

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0f9fc3ef1897e0e28d00f0c463b66fad
https://doi.org/10.1115/ipack2015-48429

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0.2-$\mu{\rm m}$ AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition ${\rm Al}_{2}{\rm O}_{3}$ Passivation

Autor: L. M. Pleasant, Wenhua Zhu, K. Nichols, Kanin Chu, P-C Chao, J. Diaz, R. Roy, Dong Xu, P. D. Ye, Min Xu

Publikováno v: IEEE Electron Device Letters. 34:744-746

We report a successful application of atomic layer deposition (ALD) aluminum oxide as a passivation layer to gallium nitride high electron-mobility transistors (HEMTs). This new passivation process results in 8%-10% higher dc maximum drain current an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4a6b9c27f3962215ebc2865c1efbe28a
https://doi.org/10.1109/led.2013.2255257

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A 50nm MHEMT millimeter-wave MMIC LNA with wideband noise and gain performance

Autor: Carl Creamer, Christopher Koh, James Schellenberg, P.M. Smith, K. H. Duh, M. Ashman, P.C. Chao, Dong Xu, Kanin Chu, Xiaoping Yang

Publikováno v: 2014 IEEE MTT-S International Microwave Symposium (IMS2014).

A 50nm MHEMT millimeter-wave MMIC low noise amplifier with state-of-the-art performance is reported. The 3-stage LNA exhibits on-wafer noise figure (NF) as low as 1.6dB with 25dB gain at 80GHz, and also shows unprecedented wideband performance, with

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7a7d9e50e2162f0ae05ac90df83bd58b
https://doi.org/10.1109/mwsym.2014.6848288

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