Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Kanhao Xue"'
Autor:
Lei Tong, Yali Bi, Yilun Wang, Kai Peng, Xinyu Huang, Wei Ju, Zhuiri Peng, Zheng Li, Langlang Xu, Runfeng Lin, Xiangxiang Yu, Wenhao Shi, Hui Yu, Huajun Sun, Kanhao Xue, Qiang He, Ming Tang, Jianbin Xu, Xinliang Zhang, Jinshui Miao, Deep Jariwala, Wei Bao, Xiangshui Miao, Ping Wang, Lei Ye
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract Nonlinear optical responses in two-dimensional (2D) materials can build free-space optical neuromorphic computing systems. Ensuring the high performance and the tunability of the system is essential to encode diverse functions. However, comm
Externí odkaz:
https://doaj.org/article/91d0db1dc31e48ac9b11a3658dd4ecec
Publikováno v:
Journal of Semiconductors. 44:042101
Inspired by the recently predicted 2D MX2Y6 (M = metal element; X = Si/Ge/Sn; Y = S/Se/Te), we explore the possible applications of alkaline earth metal (using magnesium as example) in this family based on the idea of element replacement and valence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4cdc91e39e0bdb364858106f172e38c
https://doi.org/10.1088/1674-4926/44/4/042101
https://doi.org/10.1088/1674-4926/44/4/042101
Publikováno v:
Journal of Physics: Conference Series. 2356:012008
The memristor study now generally exhibit threshold voltage characteristics. The memristance changes when the voltage across the memristor is greater than the threshold voltage. Otherwise, the memristance is almost constant. Based on this feature, we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7292fb34f6c7073ed2e9f384b96edcd0
https://doi.org/10.1088/1742-6596/2356/1/012008
https://doi.org/10.1088/1742-6596/2356/1/012008
Publikováno v:
Scientific Reports
The memristor is a promising candidate for the next generation non-volatile memory, especially based on HfO2−x, given its compatibility with advanced CMOS technologies. Although various resistive transitions were reported independently, customized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::808f2c40fda56199717dacea9d831756
https://pubmed.ncbi.nlm.nih.gov/28855562
https://pubmed.ncbi.nlm.nih.gov/28855562
Autor:
B. Traore, E. Vianello, Kanhao Xue, Leonardo R. C. Fonseca, G. Molas, P. Blaise, Barbara de Salvo, Yoshio Nishi, L. Perniola
Publikováno v:
ECS Transactions. 64:141-146
In this work we combine experimental data and first principles calculations to investigate the conductive filament (CF) creation in HfO2 based resistive switching memories. First, we propose that the CF in HfO2-based resistive OxRAMs is due to HfOx s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1778296c3f3ba1bb1691e102022095b9
https://doi.org/10.1149/06408.0141ecst
https://doi.org/10.1149/06408.0141ecst
Autor:
Elisa Vianello, Philippe Blaise, Boubacar Traoré, Kanhao Xue, Leonardo Fonseca, Gabriel Molas, Barbara de Salvo, Luca Perniola, Yoshio Nishi
Publikováno v:
ECS Meeting Abstracts. :2111-2111
Oxide based RRAM memories are considered as potential candidates to replace floating gate memory devices [1-2] due to their proven low power operation , high switching speed [3] and compatibility with conventional CMOS back-end-of-line process. The w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6823428e34eb0763400b3e696c34bbe
https://doi.org/10.1149/ma2014-02/44/2111
https://doi.org/10.1149/ma2014-02/44/2111