Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Kangyong Cho"'
Publikováno v:
2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC).
Solder paste is the main interconnect material to use between FBGA type packages and main boards. It is consisted of different types of solder powers (in case of type 3 size is 25∼45um) and flux. Many paste parameters, such as paste composition, pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::352886687f8bd4446c227f65f83beb9f
https://doi.org/10.1109/eptc50525.2020.9315137
https://doi.org/10.1109/eptc50525.2020.9315137
Publikováno v:
2019 International Symposium on Electromagnetic Compatibility - EMC EUROPE.
Recently, there has been growing interest regarding electrostatic discharge (ESD) failures of semiconductors in electronic devices. A system-level ESD test method based on the IEC61000-4-2 standard is widely used today. There is a need, however, for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4b077f0f5260224504ce0055be589a3
https://doi.org/10.1109/emceurope.2019.8871627
https://doi.org/10.1109/emceurope.2019.8871627
Publikováno v:
IRPS
In order to identify the change of dynamic refresh in dynamic random access memory (DRAM) affected by X-ray irradiation, we investigated the refresh of the weakest bit with regard to various X-ray exposure condition. Thermal annealing was implemented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93e60ed751db101b07a0f341e492b25c
https://doi.org/10.1109/irps.2019.8720574
https://doi.org/10.1109/irps.2019.8720574
Autor:
Incheol Nam, Hongsun Hwang, Minju Shin, Min-Soo Kim, Seong-Jin Jang, Kangyong Cho, Sangjae Rhee, Daesun Kim, Jinseon Kim
Publikováno v:
International Symposium for Testing and Failure Analysis.
For fault management, various types of error-correcting codes (ECC) have been widely used for most computers and memory. From a memory perspective, the ECC technique is generally adopted for DRAM modules to correct data corruption among multiple chip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bcac16f9b70fb9aba0a9e79f4117b79
https://doi.org/10.31399/asm.cp.istfa2017p0424
https://doi.org/10.31399/asm.cp.istfa2017p0424
Autor:
Seong-Jin Jang, Seon-Mi Kim, Donggyun Yoo, Jaeguen Chung, Kangyong Cho, Sangjae Rhee, Young-Il Kim, Incheol Nam, Hyungchae Jeon, Chijong Baek, Hongsun Hwang, Jahyun Koo
Publikováno v:
International Symposium for Testing and Failure Analysis.
As various types of DRAM package have been developed, new defects in interconnection in chip have been discovered after assembly process such as flip chip bump mount or wire bonding. There are lots of regular inspections in manufacturing process to d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c95ed2653343b13d99311cb6b2ae53a8
https://doi.org/10.31399/asm.cp.istfa2017p0508
https://doi.org/10.31399/asm.cp.istfa2017p0508
Autor:
Daesun Kim, Byungki Kang, Kangyong Cho, Gyo-Young Jin, Sangjae Rhee, Jung-Il Mok, Hongsun Hwang
Publikováno v:
International Symposium for Testing and Failure Analysis.
Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84965b25ca00e43a62fc524ade9ffdd9
https://doi.org/10.31399/asm.cp.istfa2016p0091
https://doi.org/10.31399/asm.cp.istfa2016p0091
Autor:
Hyung-Shin Kwon, Gyo-Young Jin, Hongsun Hwang, Mingu Jung, Myung-Jae Lee, Kangyong Cho, Sangjae Rhee, Heeil Hong
Publikováno v:
International Symposium for Testing and Failure Analysis.
As the DRAM structure is miniaturized, the cell capacitance is reduced and resistance is increased. Because of this change, the DRAM operation is more sensitive than previous generations to changes of the device elements. The device elements consist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6816681c49f1c4ee604a041b431ac224
https://doi.org/10.31399/asm.cp.istfa2016p0088
https://doi.org/10.31399/asm.cp.istfa2016p0088
Autor:
Incheol Nam, Kangyong Cho, Kwang-Won Lee, Hodong Ryu, Sangjae Rhee, Gyo-Young Jin, Hongsun Hwang, Daesun Kim, Jinseon Kim
Publikováno v:
International Symposium for Testing and Failure Analysis.
System failure due to a progressive defect in memory cell-array of DRAM was studied with automated test equipment. In order to find out relationship correctable single-bit fault and system failure, memory cells with single-bit fault by a cross-defect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7ff5bd1883845c3e8173f1a8998f915
https://doi.org/10.31399/asm.cp.istfa2016p0082
https://doi.org/10.31399/asm.cp.istfa2016p0082
Autor:
Hyong-yong Lee, Gyo-Young Jin, Kangyong Cho, Sangjae Rhee, Heeil Hong, Hongsun Hwang, Seoungbin Seo
Publikováno v:
International Symposium for Testing and Failure Analysis.
As microelectronic feature sizes are scaled down, the soft failure rate has increased. Additionally the characteristics and distribution of Dynamic Random Access Memory (DRAM) data retention time and write recovery time (tWR) are getting worse. As a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da1d0d8eb21e27d038a5c08fb40bdf04
https://doi.org/10.31399/asm.cp.istfa2016p0094
https://doi.org/10.31399/asm.cp.istfa2016p0094
Autor:
Ilsub Chung, Hongsun Hwang, Duan Sun, Sangjae Rhe, Ilgweon Kim, Kangil Kim, Kangyong Cho, Gyo-Young Jin
Publikováno v:
2016 IEEE International Integrated Reliability Workshop (IIRW).
We investigated threshold voltage degradation and recovery of short channel NMOS transistors in the sub wordline driver (SWD), where the source of NMOS transistors was biased with negative voltage during off-state. We found that the threshold voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc522f2b3634dc010dd2aa16cfed6b7e
https://doi.org/10.1109/iirw.2016.7904910
https://doi.org/10.1109/iirw.2016.7904910