Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Kangsa Pak"'
Publikováno v:
Journal of Crystal Growth. :221-224
Maskless selective growth of Mg-doped GaAs films was performed by using a low-energy (30-200 eV) Mg-Ga focused ion beam (FIB) under the ambient of As 4 molecular beam. Under suitable As 4 pressure, all samples showed p-type and the carrier concentrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3674274b755553f5476aacb6322ddf48
https://doi.org/10.1016/j.jcrysgro.2006.11.069
https://doi.org/10.1016/j.jcrysgro.2006.11.069
Publikováno v:
Journal of Crystal Growth. 275:e989-e993
Maskless selective growth of Be-doped GaAs films was performed by using a low-energy (30–200 eV) Be–Ga focused ion beam (FIB) with the irradiation of As4 molecular beam simultaneously. As a result, the selective p-type films of GaAs were grown su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6f284c6382fbb6ed474cdcd141b4a77
https://doi.org/10.1016/j.jcrysgro.2004.11.153
https://doi.org/10.1016/j.jcrysgro.2004.11.153
Publikováno v:
Journal of Crystal Growth. :1455-1459
We introduced a new growth and doping method and demonstrated in-situ maskless selective doped-GaAs films by using a Ga–Sn low energy focused ion beam. This in-situ growth-doping method is thought to be essential in the maskless selective device fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7aa83a8f75c298f9f2133de28e4b779
https://doi.org/10.1016/s0022-0248(01)02288-6
https://doi.org/10.1016/s0022-0248(01)02288-6
Publikováno v:
Journal of Crystal Growth. :476-480
For the first time, we attempted to grow maskless selective epitaxial films of InGaN and obtained cubic InGaN on GaAs (1 0 0) and hexagonal InGaN on GaAs (1 1 1) A and (1 1 1) B substrates by using an InGa low energy focused ion beam and dimethylhydr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e121001e5e98c1841b4dac9ff84ca24a
https://doi.org/10.1016/s0022-0248(01)00746-1
https://doi.org/10.1016/s0022-0248(01)00746-1
Publikováno v:
Journal of Crystal Growth. :610-613
In this study, we have demonstrated maskless selective epitaxy (MLSE) of In x Ga 1− x As on GaAs substrate using a low-energy In 0.15 Ga 0.85 -FIB and an As 4 molecular beam. We used an In 0.15 Ga 0.85 liquid alloy ion source (LAIS) as a source of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::768143575f5a0c8002e52a68b7256009
https://doi.org/10.1016/s0022-0248(98)01421-3
https://doi.org/10.1016/s0022-0248(98)01421-3
Autor:
Kangsa Pak, Yukichi Takamatsu, Takashi Yoshimura, Naoki Ohshima, Atsushi Ichige, Hiroo Yonezu, Shuichi Nishide
Publikováno v:
Journal of Crystal Growth. :325-329
Tertiarybutylhydrazine (TBHy) is one of the alternative nitrogen sources to ammonia. We investigated pyrolysis of TBHy using quadrupole mass spectrometer and grew GaN films on (0 0 0 1) sapphire substrates by low-pressure metal-organic vapor-phase ep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b29ef2fb58deaf9f1423b937e0a6042
https://doi.org/10.1016/s0022-0248(98)00279-6
https://doi.org/10.1016/s0022-0248(98)00279-6
Publikováno v:
Journal of Crystal Growth. :275-281
The two-step growth process of GaN layer on sapphire using a buffer layer deposited at room temperature has been investigated by in situ reflection high-energy electron diffraction and atomic force microscopy observations. A stepped and (9×9) recons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8545ceb9174960c83d6be49b74346f35
https://doi.org/10.1016/s0022-0248(98)00258-9
https://doi.org/10.1016/s0022-0248(98)00258-9
Publikováno v:
Journal of Crystal Growth. 186:21-26
This paper reports on a comparison of the relative extent of desorption of indium atoms during growth by molecular-beam epitaxy of (In,Ga)As films between GaAs confinement layers on GaAs substrates of all four low index orientations: (1 0 0), (1 1 0)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e136e11535027d5ea913eb9a33ccf7d5
https://doi.org/10.1016/s0022-0248(97)00464-8
https://doi.org/10.1016/s0022-0248(97)00464-8
Autor:
Naoki Ohshima, K. Samonji, Hiroo Yonezu, Yasufumi Takagi, Keiji Hayashida, Kangsa Pak, Takahiro Kawai
Publikováno v:
Journal of Crystal Growth. 150:677-680
We investigated the suppression of threading dislocation generation in GaAs-on-Si(100) with strained short-period superlattices by reflection high-energy electron diffraction and transmission electron microscopy. A two-dimensional growth mode was kep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bae306b9ddefc6e529c3c6c2525d5a86
https://doi.org/10.1016/0022-0248(95)80294-m
https://doi.org/10.1016/0022-0248(95)80294-m
Publikováno v:
Journal of Crystal Growth. 146:359-362
In-situ maskless selective epitaxy of GaAs was performed with a low-energy Ga focused ion beam (FIB) and an As 4 molecular beam. The low-energy Ga FIB and the As 4 were supplied simultaneously on GaAs(100) substrates. The incident energy (E i ) of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d70fad5371ded21bf851668a6dc3c148
https://doi.org/10.1016/0022-0248(94)00494-3
https://doi.org/10.1016/0022-0248(94)00494-3