Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Kangqiang Pan"'
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 8, Iss 2, Pp 84-92 (2022)
In the post Moore era, post-complementary metal–oxide–semiconductor (CMOS) technologies have received intense interests for possible future digital logic applications beyond the CMOS scaling limits. In the meantime, from the system perspective, n
Externí odkaz:
https://doaj.org/article/2daa069e8aad4af4b6378a7f9c05c1bd
Publikováno v:
IEEE Transactions on Nanotechnology. 22:214-221
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e20f04f2eb00ff17ea13bd113fc21e25
https://doi.org/10.1109/tnano.2023.3271308
https://doi.org/10.1109/tnano.2023.3271308
Publikováno v:
Proceedings of the Great Lakes Symposium on VLSI 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca857079c989973582cbacf141816ea7
https://doi.org/10.1145/3526241.3530336
https://doi.org/10.1145/3526241.3530336
Autor:
Tao Guo, Kangqiang Pan, Yixuan Jiao, Bai Sun, Cheng Du, Joel P. Mills, Zuolong Chen, Xiaoye Zhao, Lan Wei, Y. Norman Zhou, Yimin A. Wu
Publikováno v:
Nanoscale horizons. 7(3)
The memristor is a promising candidate to implement high-density memory and neuromorphic computing. Based on the characteristic retention time, memristors are classified into volatile and non-volatile types. However, a single memristor generally prov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f7e4550b52df85bae4afbe2262e29ac
https://pubmed.ncbi.nlm.nih.gov/35064257
https://pubmed.ncbi.nlm.nih.gov/35064257
Publikováno v:
2021 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00a863912b9fd825ed5dc8c4f7478012
https://doi.org/10.1109/nanoarch53687.2021.9642239
https://doi.org/10.1109/nanoarch53687.2021.9642239
Autor:
Tao Guo, Jiawei Ge, Bai Sun, Kangqiang Pan, Zhao Pan, Lan Wei, Yong Yan, Y. Norman Zhou, Yimin A. Wu
Publikováno v:
Advanced Electronic Materials. 8:2200449
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5537d1e8c4bb1af15fe54f6466c15373
https://doi.org/10.1002/aelm.202200449
https://doi.org/10.1002/aelm.202200449