Zobrazeno 1 - 10
of 76
pro vyhledávání: '"Kangkai Tian"'
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 5, Pp 1-7 (2021)
Tuning the plasmonic resonance peak to the deep ultraviolet (DUV) band is critical for plasmonic-enhanced AlGaN-based DUV photodetector. However,the high refractive index of AlGaN layer seriously limits the plasmonic resonance peak in DUV band. There
Externí odkaz:
https://doaj.org/article/b954e736c23c420e9a2947d1f12a1be3
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 5, Pp 1-5 (2021)
We experimentally and numerically propose a deep ultraviolet light-emitting diode (DUV LED) possessing the quantum barriers (QBs) with the gradually reduced Al composition along the [0001] orientation. The induced negative polarization bulk charges i
Externí odkaz:
https://doaj.org/article/c39770c2963445e58a992a149acea05b
Autor:
Le Chang, Yen-Wei Yeh, Sheng Hang, Kangkai Tian, Jianquan Kou, Wengang Bi, Yonghui Zhang, Zi-Hui Zhang, Zhaojun Liu, Hao-Chung Kuo
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-9 (2020)
Abstract Owing to high surface-to-volume ratio, InGaN-based micro-light-emitting diodes (μLEDs) strongly suffer from surface recombination that is induced by sidewall defects. Moreover, as the chip size decreases, the current spreading will be corre
Externí odkaz:
https://doaj.org/article/93eb8fbadef7437298971b8b8fcbcf15
Autor:
Chunshuang Chu, Kangkai Tian, Jiamang Che, Hua Shao, Jianquan Kou, Yonghui Zhang, Zi-Hui Zhang, Hao-Chung Kuo
Publikováno v:
IEEE Photonics Journal, Vol 12, Iss 3, Pp 1-7 (2020)
In this work, we have investigated the origin of efficiency droop for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). We find that the efficiency droop is likely to be caused by the electron leakage for DUV LEDs studied in this work. T
Externí odkaz:
https://doaj.org/article/5146774df45c4eae98fb8d0f98ad9883
Autor:
Jianquan Kou, KangKai Tian, Chunshuang Chu, Yonghui Zhang, Xingye Zhou, Zhihong Feng, Zi-Hui Zhang
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-18 (2019)
Abstract In this work, parametric investigations on structural optimization are systematically made for 4H-SiC-based separated absorption charge and multiplication (SACM) avalanche ultraviolet photodiode (UV APD). According to our results, the breakd
Externí odkaz:
https://doaj.org/article/21014fb7ffa04fc1a5cb2920b286743a
Autor:
Jiamang Che, Hua Shao, Jianquan Kou, Kangkai Tian, Chunshuang Chu, Xu Hou, Yonghui Zhang, Qian Sun, Zi-Hui Zhang
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-16 (2019)
Abstract In this report, we locally modulate the doping type in the n-AlGaN layer by proposing n-AlGaN/p-AlGaN/n-AlGaN (NPN-AlGaN)-structured current spreading layer for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). After inserting a
Externí odkaz:
https://doaj.org/article/8e3156899e5449d19ac3334f303ce536
Autor:
Yuxin Zheng, Yonghui Zhang, Ji Zhang, Ce Sun, Chunshuang Chu, Kangkai Tian, Zi-Hui Zhang, Wengang Bi
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-9 (2019)
Abstract In this work, flip-chip AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with various meshed contact structures are systematically investigated via three-dimensional finite-difference time-domain (3D FDTD) method. It is observed
Externí odkaz:
https://doaj.org/article/9b470f616b774d698251751784779a5a
Autor:
Yonghui Zhang, Ji Zhang, Yuxin Zheng, Ce Sun, Kangkai Tian, Chunshang Chu, Zi-Hui Zhang, Jay Guoxu Liu, Wengang Bi
Publikováno v:
IEEE Photonics Journal, Vol 11, Iss 1, Pp 1-9 (2019)
In this paper, we investigate the effect of omni-directional reflectors (ODRs) on the light extraction efficiency (LEE) for flip-chip near-ultraviolet light-emitting diodes (LEDs) on patterned (PSS) and flat sapphire substrate (FSS) using three-dimen
Externí odkaz:
https://doaj.org/article/591560e6be9d4dab9b2b29ad6fa31f14
Autor:
Jiamang Che, Chunshuang Chu, Kangkai Tian, Jianquan Kou, Hua Shao, Yonghui Zhang, Wengang Bi, Zi-Hui Zhang
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-14 (2018)
Abstract In this report, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with different p-AlGaN/n-AlGaN/p-AlGaN (PNP-AlGaN) structured current spreading layers have been described and investigated. According to our results, the adopted
Externí odkaz:
https://doaj.org/article/126052d963d7490284f05755c9bef8b8
Autor:
Fuping Huang, Xingyu Jia, Yajin Liu, Kangkai Tian, Chunshuang Chu, Quan Zheng, Yonghui Zhang, Zhen Xin, Zi-Hui Zhang, Qing Li
Publikováno v:
AIP Advances, Vol 11, Iss 4, Pp 045316-045316-10 (2021)
In this article, we propose and investigate a GaN-based trench metal–insulator–semiconductor barrier Schottky rectifier with a beveled mesa and field plate (BM-TMBS). According to our study, the beveled mesa and field plate structures help to red
Externí odkaz:
https://doaj.org/article/05b4b5f18c514f548138cfad4064febd