Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Kangchun, Lee"'
Publikováno v:
Materials & Design, Vol 241, Iss , Pp 112935- (2024)
We would like to respond to “Comments on Seo et al., Materials & Design 117 (2017) 131–138, https://doi.org/10.1016/j.matdes.2016.12.066″. Mangindaan et al. raised concerns about deriving the 2nd order equations for optimizing the W-pattern CMP
Externí odkaz:
https://doaj.org/article/3d5ef29236004582b176d35218f2dc2d
Publikováno v:
KONA Powder and Particle Journal, Vol advpub, Iss 0 (2023)
Chemical mechanical polishing (CMP) is a process that uses mechanical abrasive particles and chemical interaction in slurry to remove materials from the surface of films. With advancements in semiconductor device technology applying various materials
Externí odkaz:
https://doaj.org/article/950c6ee82cf74e34b984dbba89d62369
Autor:
Kangchun Lee, Seho Sun, Ganggyu Lee, Gyeonghui Yoon, Donghyeok Kim, Junha Hwang, Hojin Jeong, Taeseup Song, Ungyu Paik
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Abstract In this report, the galvanic corrosion inhibition between Cu and Ru metal films is studied, based on bonding orbital theory, using pyridinecarboxylic acid groups which show different affinities depending on the electron configuration of each
Externí odkaz:
https://doaj.org/article/1822b3b9da56427e9e2c98bab5bdda69
Autor:
Keemin Park, Seunggun Choi, Jiseok Kwon, Jaeik Kim, Seonghan Jo, Kangchun Lee, Ho Bum Park, HyukSu Han, Ungyu Paik, Taeseup Song
Publikováno v:
ACS Applied Energy Materials. 6:3432-3441
Autor:
Kangchun Lee, Jihoon Seo
Publikováno v:
Applied Sciences, Vol 12, Iss 3, p 1227 (2022)
Topography of tungsten should be assured at a minimum through chemical mechanical planarization (CMP) in the metal gate structures (e.g., buried gates, replacement metal gates) and via contact in the middle of line (MOL) process for sub−7 nm semico
Externí odkaz:
https://doaj.org/article/97bbca6fb2ac401d948a10b55ee15dff
Autor:
Seho Sun, Kangchun Lee, Ganggyu Lee, Yehwan Kim, Sungmin Kim, Junha Hwang, Hyungoo Kong, Kyung Yoon Chung, Ghulam Ali, Taeseup Song, Ungyu Paik
Publikováno v:
Journal of Industrial and Engineering Chemistry. 111:219-225
Autor:
Jiseok Kwon, Seho Sun, Seunggun Choi, Kangchun Lee, Seonghan Jo, Keemin Park, Young Kwang Kim, Ho Bum Park, Hee Young Park, Jong Hyun Jang, Hyuksu Han, Ungyu Paik, Taeseup Song
Publikováno v:
Advanced Materials.
Autor:
Seho Sun, Gaeun Kim, Dongsoo Lee, Eunkyung Park, Seungcheol Myeong, Byoungkuk Son, Kangchun Lee, Minchul Jang, Ungyu Paik, Taeseup Song
Publikováno v:
Chemical Communications. 58:9834-9837
Water-induced solvation sheath control enables higher efficiency of Li metal usage, resulting from novel anion-derived SEI layer formation.
Autor:
Keemin Park, Hee Eun Yoo, Yongmin Jung, Myeungwoo Ryu, Seungcheol Myeong, Dongsoo Lee, Soo Chan Kim, Chanho Kim, Jeongheon Kim, Jiseok Kwon, Kangchun Lee, Chae-Woong Cho, Ungyu Paik, Taeseup Song
Publikováno v:
Journal of Power Sources. 577:233238
Autor:
Seho, Sun, Gaeun, Kim, Dongsoo, Lee, Eunkyung, Park, Seungcheol, Myeong, Byoungkuk, Son, Kangchun, Lee, Minchul, Jang, Ungyu, Paik, Taeseup, Song
Publikováno v:
Chemical communications (Cambridge, England). 58(70)
The solvation sheath of Li