Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Kang-Sheng Yin"'
Autor:
Jia Chen, Hsiao-Cheng Chiang, Nian Duan, Shin-Ping Huang, Chung-I Yang, Xiangshui Miao, Yi Li, Ting-Chang Chang, Kang-Sheng Yin
Publikováno v:
ACS Applied Electronic Materials. 1:132-140
Neuromorphic computing with intelligent power-efficient data processing has become an innovative technology to overcome the performance bottleneck of traditional von Neumann-type computing architecture. As an essential element to construct a neuromor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::545383ed08f1cad0569abd53743d9ba5
https://doi.org/10.1021/acsaelm.8b00060
https://doi.org/10.1021/acsaelm.8b00060
Autor:
Simon M. Sze, Zhuo-Rui Wang, Kan-Hao Xue, Yu-Ting Su, Ting-Chang Chang, Kang-Sheng Yin, Yi Li, Ya-Xiong Zhou, Long Cheng, Xiang-Shui Miao
Publikováno v:
2018 IEEE International Memory Workshop (IMW).
RRAM is a promising candidate to construct in-memory computing architecture which can break through the von Neumann bottleneck. Taking advantage of the CMOS compatible 1T1R RRAM, functionally complete Boolean logics can be realized within two steps i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dc7c7de0df1eba1416d03ba9ed769e2
https://doi.org/10.1109/imw.2018.8388837
https://doi.org/10.1109/imw.2018.8388837
Autor:
Long Cheng, Miao-Miao Jin, Xiangshui Miao, Zhuo-Rui Wang, Yi Li, Yu-Ting Su, Ting-Chang Chang, Kang-Sheng Yin, Si-Yu Hu
Publikováno v:
Advanced Functional Materials. 29:1905660
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0403122d1044ef5532f6a6ef5d9c7107
https://doi.org/10.1002/adfm.201905660
https://doi.org/10.1002/adfm.201905660
Autor:
Kan-Hao Xue, Xiangshui Miao, Ya-Xiong Zhou, Ke Lu, Kang-Sheng Yin, Yi Li, Long Cheng, Ming Liu, Meiyun Zhang, Zhuo-Rui Wang, Shibing Long
Publikováno v:
Applied Physics Letters. 111:213505
Memristors are attracting considerable interest for their prospective applications in nonvolatile memory, neuromorphic computing, and in-memory computing. However, the nature of resistance switching is still under debate, and current fluctuation in m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4319382d28083b4603bb3b956387b48
https://doi.org/10.1063/1.5003217
https://doi.org/10.1063/1.5003217
Autor:
Yi Li, Kang-Sheng Yin, Mei-Yun Zhang, Long Cheng, Ke Lu, Shi-Bing Long, Yaxiong Zhou, Zhuorui Wang, Kan-Hao Xue, Ming Liu, Xiang-Shui Miao
Publikováno v:
Applied Physics Letters; 11/20/2017, Vol. 111 Issue 21, p1-5, 5p, 2 Diagrams, 3 Graphs